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參數(shù)資料
| 型號： | S29NS032J0PBAW003 |
| 廠商： | Spansion Inc. |
| 英文描述： | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| 中文描述： | 110納米CMOS 1.8伏只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 83/85頁 |
| 文件大小： | 799K |
| 代理商： | S29NS032J0PBAW003 |
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March 22, 2006 S29NS-J_00_A10
S29NS-J
79
D a t a S h e e t
Revision A6 (April 7, 2004)
Ordering I nformation
Removed Pb-Free Compliant options from 32 Megabit and 16 Megabit combinations for both 66
MHz and 54 MHz.
Global
Corrected figure references.
AC Characteristics
Modified the t
READY
timing in Figure 14 in Hardware Reset (RESET#).
Erase and Programming Performance
Added density and typical values to Accelerated Chip Erase Time parameter.
Data Retention
Remove section.
Revision A7 (August 4, 2004)
Global Change
Changed all instances of “FASL” to “Spansion”.
Added Colophon text.
Sector Erase Command Sequence
Replaced “50 μs” with “t
SEA
(sector erase accept) '.
Accelerated Sector Erase Groups, S29NS032J
Replaced “SA0–SA7” with “SA0–SA3”.
Replaced “
SA8–SA15” with “SA4–SA7”.
Replaced “
SA16–SA23” with “SA8–SA11”.
Replaced “SA24–SA31” with “SA56–SA59”.
Deleted “SA40–SA47”.
Deleted “SA48–SA55”.
Deleted “SA48–SA55”.
Replaced “
SA56–SA62” with “SA60–SA62”.
Accelerated Sector Erase Groups, S29NS016J
Replaced “
SA0–SA7” with “SA0–SA1”.
Replaced “
SA8–SA15” with
Replaced “SA16–SA23” with
Replaced “SA24–SA30” with
Added the following: SA8-SA9; SA10-SA11; SA12-SA13; SA14-SA15; SA16-SA17; SA18-SA19;
SA20-SA21; SA22-SA23; SA24-SA25; SA26-SA27; SA28-SA29; SA30
Erase Suspend/ Erase Resume Commands
Replaced “50 μs” with “t
SEA
”.
Replaced “35 μs” with “t
ESL
(erase suspend latency)”.
DQ7: Data# Polling
Replaced “1 μs” with “t
PSP
”.
Replaced “100 μs” with “t
ASP
(all sectors protected toggle time)”.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29NS032J0PBFW00 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBFW000 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBFW002 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBFW003 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBJW00 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29NS032J0PBFW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBFW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBFW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBFW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBJW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
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