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  • 參數(shù)資料
    型號(hào): S29GL256M10TAIR23
    廠商: SPANSION LLC
    元件分類: DRAM
    英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
    中文描述: 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
    封裝: MO-142EC, TSOP-56
    文件頁數(shù): 50/160頁
    文件大?。?/td> 2142K
    代理商: S29GL256M10TAIR23
    50
    S29GLxxxM MirrorBit
    TM
    Flash Family
    S29GLxxxM_00A5 April 30, 2004
    P r e l i m i n a r y
    SA79
    1001111xxx
    64/32
    4F0000h–4FFFFFh
    278000h–27FFFFh
    SA80
    1010000xxx
    64/32
    500000h–50FFFFh
    280000h–28FFFFh
    SA81
    1010001xxx
    64/32
    510000h–51FFFFh
    288000h–28FFFFh
    SA82
    1010010xxx
    64/32
    520000h–52FFFFh
    290000h–297FFFh
    SA83
    1010011xxx
    64/32
    530000h–53FFFFh
    298000h–29FFFFh
    SA84
    1010100xxx
    64/32
    540000h–54FFFFh
    2A0000h–2A7FFFh
    SA85
    1010101xxx
    64/32
    550000h–55FFFFh
    2A8000h–2AFFFFh
    SA86
    1010110xxx
    64/32
    560000h–56FFFFh
    2B0000h–2B7FFFh
    SA87
    1010111xxx
    64/32
    570000h–57FFFFh
    2B8000h–2BFFFFh
    SA88
    1011000xxx
    64/32
    580000h–58FFFFh
    2C0000h–2C7FFFh
    SA89
    1011001xxx
    64/32
    590000h–59FFFFh
    2C8000h–2CFFFFh
    SA90
    1011010xxx
    64/32
    5A0000h–5AFFFFh
    2D0000h–2D7FFFh
    SA91
    1011011xxx
    64/32
    5B0000h–5BFFFFh
    2D8000h–2DFFFFh
    SA92
    1011100xxx
    64/32
    5C0000h–5CFFFFh
    2E0000h–2E7FFFh
    SA93
    1011101xxx
    64/32
    5D0000h–5DFFFFh
    2E8000h–2EFFFFh
    SA94
    1011110xxx
    64/32
    5E0000h–5EFFFFh
    2F0000h–2FFFFFh
    SA95
    1011111xxx
    64/32
    5F0000h–5FFFFFh
    2F8000h–2FFFFFh
    SA96
    1100000xxx
    64/32
    600000h–60FFFFh
    300000h–307FFFh
    SA97
    1100001xxx
    64/32
    610000h–61FFFFh
    308000h–30FFFFh
    SA98
    1100010xxx
    64/32
    620000h–62FFFFh
    310000h–317FFFh
    SA99
    1100011xxx
    64/32
    630000h–63FFFFh
    318000h–31FFFFh
    SA100
    1100100xxx
    64/32
    640000h–64FFFFh
    320000h–327FFFh
    SA101
    1100101xxx
    64/32
    650000h–65FFFFh
    328000h–32FFFFh
    SA102
    1100110xxx
    64/32
    660000h–66FFFFh
    330000h–337FFFh
    SA103
    1100111xxx
    64/32
    670000h–67FFFFh
    338000h–33FFFFh
    SA104
    1101000xxx
    64/32
    680000h–68FFFFh
    340000h–347FFFh
    SA105
    1101001xxx
    64/32
    690000h–69FFFFh
    348000h–34FFFFh
    SA106
    1101010xxx
    64/32
    6A0000h–6AFFFFh
    350000h–357FFFh
    SA107
    1101011xxx
    64/32
    6B0000h–6BFFFFh
    358000h–35FFFFh
    SA108
    1101100xxx
    64/32
    6C0000h–6CFFFFh
    360000h–367FFFh
    SA109
    1101101xxx
    64/32
    6D0000h–6DFFFFh
    368000h–36FFFFh
    SA110
    1101110xxx
    64/32
    6E0000h–6EFFFFh
    370000h–377FFFh
    SA111
    1101111xxx
    64/32
    6F0000h–6FFFFFh
    378000h–37FFFFh
    SA112
    1110000xxx
    64/32
    700000h–70FFFFh
    380000h–387FFFh
    SA113
    1110001xxx
    64/32
    710000h–71FFFFh
    388000h–38FFFFh
    SA114
    1110010xxx
    64/32
    720000h–72FFFFh
    390000h–397FFFh
    Table 8. S29GL064M (Model R3) Top Boot Sector Architecture (Continued)
    Sector
    Sector Address
    A21–A12
    Sector Size
    (Kbytes/Kwords)
    (x8)
    Address Range
    (x16)
    Address Range
    相關(guān)PDF資料
    PDF描述
    S29GL256M10TFIR10 MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2?3?; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (&#181;s) typ: 0.06; Package: SOP-8
    S29GL256M10TFIR12 MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2/3; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (&#181;s) typ: 0.06; Package: SOP-8
    S29GL256M10TFIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
    S29GL256M10TFIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
    S29GL256M10TFIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
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