參數(shù)資料
型號(hào)： S29GL256M10FFIR23
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述： 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 18 X 12 MM, LEAD FREE, FORTIFIED, BGA-64
文件頁(yè)數(shù)： 1/160頁(yè)
文件大?。?/td> 2142K
代理商： S29GL256M10FFIR23
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Publication Number
S29GLxxxM_00
Revision
A
Amendment
5
Issue Date
April 30, 2004
PRELIMINARY
S29GLxxxM MirrorBit
TM
Flash Family
S29GL256M, S29GL128M, S29GL064M, S29GL032M
256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
0.23 um MirrorBit process technology
Datasheet
Distinctive Characteristics
Architectural Advantages
Single power supply operation
— 3 volt read, erase, and program operations
Manufactured on 0.23 um MirrorBit process
technology
SecSi
(Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— 256Mb: 512 32 Kword (64 Kbyte) sectors
— 128Mb: 256 32 Kword (64 Kbyte) sectors
— 64Mb (uniform sector models): 128 32 Kword (64
Kbyte) sectors or 128 32 Kword sectors
— 64Mb (boot sector models): 127 32 Kword (64 Kbyte)
sectors + 8 4Kword (8Kbyte) boot sectors
— 32Mb (uniform sector models): 64 32Kword (64
Kbyte) sectors of 64 32Kword sectors
— 32Mb (boot sector models): 63 32Kword (64 Kbyte)
sectors + 8 4Kword (8Kbyte) boot sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
power supply flash, and superior inadvertent write
protection
100,000 erase cycles typical per sector
20-year data retention typical
Performance Characteristics
High performance
— 90 ns access time (128Mb, 64Mb, 32Mb),
100 ns access time (256Mb)
— 4-word/8-byte page read buffer
— 25 ns page read times (128Mb, 64Mb, 32Mb)
— 30 ns page read times (256Mb)
— 16-word/32-byte write buffer
— 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Low power consumption (typical values at 3.0 V, 5
MHz)
— 18 mA typical active read current (64 Mb, 32 Mb)
— 25 mA typical active read current (256 Mb, 128 Mb)
— 50 mA typical erase/program current
— 1 μA typical standby mode current
Package options
— 40-pin TSOP
— 48-pin TSOP
— 56-pin TSOP
— 64-ball Fortified BGA
— 48-ball fine-pitch BGA
— 63-ball fine-pitch BGA
Software & Hardware Features
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
— Unlock Bypass Program command reduces overall
multiple-word programming time
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID
-level method of
charging code in locked sectors
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings on uniform
sector models
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
相關(guān)PDF資料
PDF描述
S29GL064M90BDIR02 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90BDIR03 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90BDIR10 MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
S29GL064M90BDIR12 MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
S29GL064M90BDIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL256M10TAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 100ns 56-Pin TSOP Tray
S29GL256M11FAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
S29GL256M11FAIR12 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, FBGA64 IND - Trays
S29GL256M11FAIR2 制造商:Spansion 功能描述:NOR Flash, 16M x 16, 64 Pin, Plastic, BGA
S29GL256M11FAIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
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