• 參數資料
    型號: S29GL128P13TFIV13
    廠商: SPANSION LLC
    元件分類: PROM
    英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
    中文描述: 8M X 16 FLASH 3V PROM, 110 ns, PDSO56
    封裝: 14 X 20 MM, LEAD FREE, MO-142EC, TSOP-56
    文件頁數: 29/71頁
    文件大?。?/td> 990K
    代理商: S29GL128P13TFIV13
    November21,2006 S29GL-P_00_A3
    S29GL-P MirrorBit
    TM
    Flash Family
    27
    D a t a
    S h e e t
    ( A d v a n c e
    I n f o r m a t i o n )
    7.7.4
    Chip Erase Command Sequence
    Chip erase is a six-bus cycle operation as indicated by
    Table 12.1 on page 61
    . These commands invoke the
    Embedded Erase algorithm, which does not require the system to preprogram prior to erase. The Embedded
    Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to
    electrical erase. After a successful chip erase, all locations of the chip contain FFFFh. The system is not
    required to provide any controls or timings during these operations. The “Command Definition” section in the
    appendix shows the address and data requirements for the chip erase command sequence.
    When the Embedded Erase algorithm is complete, that sector returns to the read mode and addresses are no
    longer latched. The system can determine the status of the erase operation by using DQ7 or DQ6/DQ2. Refer
    to “Write Operation Status” for information on these status bits.
    The Unlock Bypass feature allows the host system to send program commands to the Flash device without
    first writing unlock cycles within the command sequence. See
    Section 7.7.8
    for details on the Unlock Bypass
    function.
    Any commands written during the chip erase operation are ignored. However, note that a hardware reset
    immediately terminates the erase operation. If that occurs, the chip erase command sequence should be
    reinitiated once that sector has returned to reading array data, to ensure the entire array is properly erased.
    Software Functions and Sample Code
    The following is a C source code example of using the chip erase function. Refer to the
    Spansion Low Level
    Driver User’s Guide
    (available on
    www.spansion.com
    ) for general information on Spansion Flash memory
    software development guidelines.
    /* Example: Chip Erase Command */
    /* Note: Cannot be suspended */
    *( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */
    *( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */
    *( (UINT16 *)base_addr + 0x555 ) = 0x0080; /* write setup command */
    *( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write additional unlock cycle 1 */
    *( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write additional unlock cycle 2 */
    *( (UINT16 *)base_addr + 0x000 ) = 0x0010; /* write chip erase command */
    Table 7.9
    Chip Erase
    (LLD Function = lld_ChipEraseCmd)
    Cycle
    Description
    Operation
    Byte Address
    Word Address
    Data
    1
    Unlock
    Write
    Base + AAAh
    Base + 555h
    00AAh
    2
    Unlock
    Write
    Base + 555h
    Base + 2AAh
    0055h
    3
    Setup Command
    Write
    Base + AAAh
    Base + 555h
    0080h
    4
    Unlock
    Write
    Base + AAAh
    Base + 555h
    00AAh
    5
    Unlock
    Write
    Base + 555h
    Base + 2AAh
    0055h
    6
    Chip Erase Command
    Write
    Base + AAAh
    Base + 555h
    0010h
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