參數(shù)資料
型號(hào): S29GL128N90FFI010
廠商: SPANSION LLC
元件分類(lèi): DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述: 8M X 16 FLASH 3V PROM, 90 ns, PBGA64
封裝: 13 X 11 MM, 1MM PITCH, LEAD FREE, FBGA-64
文件頁(yè)數(shù): 88/100頁(yè)
文件大?。?/td> 952K
代理商: S29GL128N90FFI010
86
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
AC Characteristics
Figure 20. Alternate CE# Controlled Write (Erase/Program)
Operation Timings
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
t
BUSY
Notes:
1.
2.
3.
Figure indicates last two bus cycles of a program or erase operation.
PA = program address, SA = sector address, PD = program data.
DQ7# is the complement of the data written to the device. D
OUT
is the data
written to the device.
相關(guān)PDF資料
PDF描述
S29GL128N90FFI012 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N90FFI013 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N90FFI020 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N90FFI022 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N90FFI023 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
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