參數(shù)資料
型號: S29GL128N90FAIV13
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述: 8M X 16 FLASH 3V PROM, 90 ns, PBGA64
封裝: 13 X 11 MM, 1MM PITCH, FBGA-64
文件頁數(shù): 84/100頁
文件大小: 952K
代理商: S29GL128N90FAIV13
82
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
AC Characteristics
OE#
CE#
Addresses
V
CC
WE#
Data
2AAh
SA
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
t
RB
t
BUSY
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see
Write Operation Status on
page 67
).
2. These waveforms are for the word mode.
Figure 16. Chip/Sector Erase Operation Timings
相關(guān)PDF資料
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S29GL128N90FAIV20 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
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S29GL128N90FAIV23 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
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