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參數(shù)資料
| 型號： | S29GL128N11FFI023 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| 中文描述： | 8M X 16 FLASH 3V PROM, 110 ns, PBGA64 |
| 封裝： | 13 X 11 MM, LEAD FREE, FBGA-64 |
| 文件頁數(shù)： | 98/100頁 |
| 文件大?。?/td> | 952K |
| 代理商： | S29GL128N11FFI023 |
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96
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
Alternate CE# Controlled Erase and Program Operations
Created a family table.
Erase and Programming Performance
Created a family table.
Revision A6 (January 24, 2005)
Global
Updated access times for S29GL512N.
Product Selector Guides
All tables updated.
Valid Combinations Tables
All tables updated.
AC Characteristics Read-Only Options Table
Added note for 90 ns speed options.
AC Characteristics Erase and Programming Performance Table
Added note for 90 ns speed options.
Figure 17
on page 83
Updated timing diagram.
AC Characteristics Alternate CE# Controlled Erase and Program
Operations Table
Added note for 90 ns speed options.
Revision A7 (February 14, 2005)
Distinctive Characteristics
Added Product Availability Table
Ordering I nformation
Under Model Numbers, changed V
IO
voltage values for models V1 and V2.
Physical Dimensions
Updated Package Table
Revision A8 (May 9, 2005)
Product Availability Table
Updated data in V
CC
and availability columns.
Product Selector Guide
Combined GL128N and GL256N tables. Changed upper limit of VIO voltage range to 3.6 V.
Ordering I nformation
Added wireless temperature range. Combined valid combinations table and updated for wire-
less temperature range part numbers.
DC Characteristics table
Added V
IO
= V
CC
test condition to I
CC4
, I
CC5
, I
CC6
specifications. Corrected unit of measure
on ICC4 to μA. Changed maximum specifications for I
ACC
(on ACC pin) and I
CC3
to 90 mA.
Tables 12– 15, Memory Array and Sector Protection ( x8 & x16)
Re-formatted command definition tables for easier reference.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL128N11FFIV10 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N11FFIV12 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N11FFIV13 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N11FFIV20 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N11TFIV13 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128N11FFIIH0 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 110ns 64-Pin Fortified BGA Tray |
| S29GL128N11FFIV10 | 制造商:Spansion 功能描述:Flash - NOR IC |
| S29GL128N11FFIV20 | 制造商:Spansion 功能描述:Flash - NOR IC |
| S29GL128N11FFVR10 | 制造商:Spansion 功能描述:FLASH PARALLEL 3.3V 128MBIT 16MX8/8MX16 110NS 56TSOP - Trays |
| S29GL128N11TAI010 | 制造商:Spansion 功能描述:SPZS29GL128N11TAI010 FLSH MEM EOL161008 |
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