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參數(shù)資料
| 型號： | S29GL128N10FAIV13 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| 中文描述： | 8M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1MM PITCH, FBGA-64 |
| 文件頁數(shù)： | 95/100頁 |
| 文件大?。?/td> | 952K |
| 代理商： | S29GL128N10FAIV13 |
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S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
93
D a t a S h e e t
Revision A2 (January 22, 2004)
Lock Register
Corrected and added new text for Secured Silicon Sector Protection Bit, Persistent Protection
Mode Lock Bit, and Password Protection Mode Lock Bit.
Persistent Sector Protection
Persistent Protection Bit (PPB): Added the second paragraph text about programming the PPB
bit.
Persistent Protection Bit Lock (PPB Lock Bit): Added the second paragraph text about config-
uring the PPB Lock Bit, and fourth paragraph on Autoselect Sector Protection Verification.
Added PPB Lock Bit requirement of 200ns access time.
Passw ord Sector Protection
Corrected 1 μs (built-in delay for each password check) to 2 μs.
Lock Register Command Set Definitions
Added new information for this section.
Passw ord Protection Command Set Definitions
Added new information for this section.
Non-Volatile Sector Protection Command Set Definitions
Added new information for this section.
Global Volatile Sector Protection Freeze Command Set
Added new information for this section.
Volatile Sector Protection Command Set
Added new information for this section.
Secured Silicon Sector Entry Command
Added new information for this section.
Secured Silicon Sector Exit Command
Added new information for this section.
Revision A3 (March 2, 2004)
Connection Diagrams
Removed 56-pin reverse TSOP diagram.
Ordering I nformation
Updated the Standard Products for the S29GL512/256/128N devices and modified the valid
combinations tables.
W ord Program Command Sequence
Added new information to this section.
Lock Register Command Set Definitions
Added new information to this section.
Table 13
Updated this table.
相關(guān)PDF資料 |
PDF描述 |
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| S29GL128N10FAIV20 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N10FAIV22 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N10FAIV23 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N10FFI010 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N10FFI012 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128N10FFI010 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 128MB SMD 29LV128 |
| S29GL128N10FFI020 | 制造商:Spansion 功能描述:Flash - NOR IC |
| S29GL128N10TF101 | 制造商:Spansion 功能描述: |
| S29GL128N10TFI010 | 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:閃存 技術(shù):FLASH - NOR 存儲容量:128Mb （16M x 8，8M x 16） 寫周期時間 - 字，頁:100ns 訪問時間:100ns 存儲器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91 |
| S29GL128N10TFI020 | 制造商:Spansion 功能描述:S29GL128N10TFI020 制造商:Spansion 功能描述:Flash - NOR IC |
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