參數(shù)資料
    型號(hào)： S29GL128N10FAI023
    廠商： SPANSION LLC
    元件分類： DRAM
    英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
    中文描述： 8M X 16 FLASH 3V PROM, 100 ns, PBGA64
    封裝： 13 X 11 MM, FBGA-64
    文件頁(yè)數(shù)： 7/100頁(yè)
    文件大?。?/td> 952K
    代理商： S29GL128N10FAI023
    October 13, 2006 S29GL-N_00B3
    S29GL-N MirrorBit Flash Family
    5
    D a t a S h e e t
    Read-Only Operations ......................................................................................77
    Figure 11. Read Operation Timings....................................... 78
    Figure 12. Page Read Timings.............................................. 78
    Hardware Reset (RESET#) ...............................................................................79
    Figure 13. Reset Timings..................................................... 79
    Erase and Program Operations .....................................................................80
    Figure 14. Program Operation Timings .................................. 81
    Figure 15. Accelerated Program Timing Diagram .................... 81
    Figure 16. Chip/Sector Erase Operation Timings..................... 82
    Figure 17. Data# Polling Timings
    (During Embedded Algorithms) ............................................ 83
    Figure 18. Toggle Bit Timings (During Embedded Algorithms) .. 84
    Figure 19. DQ2 vs. DQ6 ...................................................... 84
    Alternate CE# Controlled Erase and Program Operations-
    S29GL128N, S29GL256N, S29GL512N .........................................................85
    Figure 20. Alternate CE# Controlled Write (Erase/Program)
    Operation Timings.............................................................. 86
    Erase And Programming Performance . . . . . . . . 87
    TSOP Pin and BGA Package Capacitance . . . . . 87
    Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . 88
    TS056—56-Pin Standard Thin Small Outline Package (TSOP) .............88
    LAA064—64-Ball Fortified Ball Grid Array (FBGA) ...............................89
    Advance Information on S29GL-P Hardware Reset
    (RESET#) and Power-up Sequence . . . . . . . . . . . 90
    Table 18. Hardware Reset (RESET#) ....................................90
    Figure 21. Reset Timings .................................................... 90
    Table 19. Power-Up Sequence Timings .................................91
    Figure 22. Power-On Reset Timings...................................... 91
    Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . . 92
    相關(guān)PDF資料
    PDF描述
    S29GL128N10FAIV10 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
    S29GL128N10FAIV12 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
    S29GL128N10FAIV13 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
    S29GL128N10FAIV20 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
    S29GL128N10FAIV22 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    S29GL128N10FFI010 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 128MB SMD 29LV128
    S29GL128N10FFI020 制造商:Spansion 功能描述:Flash - NOR IC
    S29GL128N10TF101 制造商:Spansion 功能描述:
    S29GL128N10TFI010 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:128Mb （16M x 8，8M x 16） 寫周期時(shí)間 - 字，頁(yè):100ns 訪問(wèn)時(shí)間:100ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91
    S29GL128N10TFI020 制造商:Spansion 功能描述:S29GL128N10TFI020 制造商:Spansion 功能描述:Flash - NOR IC
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