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| 型號(hào)： | S29GL128M90TAIR13 |
| 廠商： | SPANSION LLC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| 中文描述： | 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 |
| 封裝： | MO-142EC, TSOP-56 |
| 文件頁(yè)數(shù)： | 5/160頁(yè) |
| 文件大?。?/td> | 2142K |
| 代理商： | S29GL128M90TAIR13 |
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April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
5
Figure 8. Toggle Bit Algorithm............................................ 118
DQ2: Toggle Bit II ..............................................................................................118
Reading Toggle Bits DQ6/DQ2 .....................................................................119
DQ5: Exceeded Timing Limits .......................................................................119
DQ3: Sector Erase Timer ................................................................................119
DQ1: Write-to-Buffer Abort .........................................................................120
Table 33. Write Operation Status ........................................120
Figure 9. Maximum Negative Overshoot Waveform............... 121
Figure 10. Maximum Positive
Overshoot Waveform........................................................ 121
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 121
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 122
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Figure 11. Test Setup ....................................................... 123
Table 34. Test Specifications ..............................................123
Key to Switching Waveforms . . . . . . . . . . . . . . 123
Figure 12. Input Waveforms and
Measurement Levels......................................................... 123
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 124
Read-Only Operations-S29GL256M only ..................................................124
Read-Only Operations-S29GL128M only ...................................................124
Read-Only Operations-S29GL064M only ..................................................125
Read-Only Operations-S29GL032M only ..................................................125
Figure 13. Read Operation Timings..................................... 126
Figure 14. Page Read Timings............................................ 126
Hardware Reset (RESET#) .............................................................................127
Figure 15. Reset Timings................................................... 127
Erase and Program Operations-S29GL256M only ..................................128
Erase and Program Operations-S29GL128M only ...................................129
Erase and Program Operations-S29GL064M only ..................................130
Erase and Program Operations-S29GL032M only ...................................131
Figure 16. Program Operation Timings................................ 132
Figure 17. Accelerated Program Timing Diagram .................. 132
Figure 18. Chip/Sector Erase Operation Timings................... 133
Figure 19. Data# Polling Timings
(During Embedded Algorithms).......................................... 134
Figure 20. Toggle Bit Timings (During Embedded Algorithms) 135
Figure 21. DQ2 vs. DQ6.................................................... 135
Temporary Sector Unprotect .......................................................................136
Figure 22. Temporary Sector Group Unprotect Timing
Diagram ......................................................................... 136
Figure 23. Sector Group Protect and Unprotect Timing
Diagram ......................................................................... 137
Alternate CE# Controlled Erase and Program
Operations-S29GL256M ..................................................................................138
Alternate CE# Controlled Erase and Program
Operations-S29GL128M ..................................................................................139
Alternate CE# Controlled Erase and Program
Operations-S29GL064M .................................................................................140
Alternate CE# Controlled Erase and Program
Operations-S29GL032M ...................................................................................141
Figure 24. Alternate CE# Controlled Write (Erase/Program)
Operation Timings............................................................ 142
Erase And Programming Performance . . . . . . . .143
TSOP Pin and BGA Package Capacitance . . . . .144
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . .145
TS040—40-Pin Standard Thin Small Outline Package ...........................145
TS048—48-Pin Standard/Reverse Thin Small Outline
Package (TSOP) .................................................................................................147
TSR048—48-Pin Standard/Reverse Thin Small Outline
Package (TSOP) .................................................................................................148
TS056/TSR056—56-Pin Standard/Reverse Thin Small Outline Package
(TSOP) ..................................................................................................................149
LAA064—64-Ball Fortified Ball Grid Array (FBGA) ..............................150
LAC064—64-Pin 18 x 12 mm package ..........................................................151
FBA048—48-Pin 6.15 x 8.15 mm package ...................................................152
FBC048—48-Pin 8 x 9 mm package ...........................................................153
FBE063—63-Pin 12 x 11 mm package ............................................................154
FPT-48P-M19 .......................................................................................................155
FPT-56P-M01 .......................................................................................................156
BGA-48P-M20 ....................................................................................................157
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . .158
Pin Description ..............................................................................................159
Logic Symbols .................................................................................................160
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| S29GL128M90TAIR20 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL128M90TAIR22 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128M90TFIR10 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray |
| S29GL128N10FFI010 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 128MB SMD 29LV128 |
| S29GL128N10FFI020 | 制造商:Spansion 功能描述:Flash - NOR IC |
| S29GL128N10TF101 | 制造商:Spansion 功能描述: |
| S29GL128N10TFI010 | 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤(pán) 零件狀態(tài):在售 存儲(chǔ)器類(lèi)型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:128Mb （16M x 8，8M x 16） 寫(xiě)周期時(shí)間 - 字，頁(yè):100ns 訪(fǎng)問(wèn)時(shí)間:100ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類(lèi)型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91 |
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