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參數(shù)資料
| 型號： | S29GL128M90TAIR12 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| 中文描述： | 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 |
| 封裝： | MO-142-EC, TSOP-56 |
| 文件頁數(shù)： | 110/160頁 |
| 文件大?。?/td> | 2142K |
| 代理商： | S29GL128M90TAIR12 |
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110
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
Any commands written during the chip erase operation are ignored. However,
note that a
hardware reset
immediately terminates the erase operation. If that
occurs, the chip erase command sequence should be reinitiated once the device
has returned to reading array data, to ensure data integrity.
Figure 6 illustrates the algorithm for the erase operation. Refer to the Erase and
Program Operations table in the AC Characteristics section for parameters, and
Figure 18 section for timing diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is
initiated by writing two unlock cycles, followed by a set-up command. Two addi-
tional unlock cycles are written, and are then followed by the address of the
sector to be erased, and the sector erase command. Table
31
and Table
32
shows
the address and data requirements for the sector erase command sequence.
The device does
not
require the system to preprogram prior to erase. The Em-
bedded Erase algorithm automatically programs and verifies the entire memory
for an all zero data pattern prior to electrical erase. The system is not required to
provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of 50 μs occurs.
During the time-out period, additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer may be done in any
sequence, and the number of sectors may be from one sector to all sectors. The
time between these additional cycles must be less than 50 μs, otherwise erasure
may begin. Any sector erase address and command following the exceeded time-
out may or may not be accepted. It is recommended that processor interrupts be
disabled during this time to ensure all commands are accepted. The interrupts
can be re-enabled after the last Sector Erase command is written.
Any com-
mand other than Sector Erase or Erase Suspend during the time-out
period resets the device to the read mode.
Note that the SecSi Sector, au-
toselect, and CFI functions are unavailable when an erase operation is in
progress
.
The system must rewrite the command sequence and any additional
addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out
(See the section on DQ3: Sector Erase Timer.). The time-out begins from the ris-
ing edge of the final WE# pulse in the command sequence.
When the Embedded Erase algorithm is complete, the device returns to reading
array data and addresses are no longer latched. The system can determine the
status of the erase operation by reading DQ7, DQ6, or DQ2 in the erasing sector.
Refer to the Write Operation Status section for information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is
valid. All other commands are ignored. However, note that a
hardware reset
im-
mediately
terminates the erase operation. If that occurs, the sector erase
command sequence should be reinitiated once the device has returned to reading
array data, to ensure data integrity.
Figure 6 illustrates the algorithm for the erase operation. Refer to the Erase and
Program Operations table in the AC Characteristics section for parameters, and
Figure 18 section for timing diagrams.
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