參數(shù)資料
型號(hào)： S29GL064N90TAI032
廠商： Spansion Inc.
英文描述： 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述： 64兆，32兆位3.0伏只頁面模式閃存具有110納米MirrorBit工藝技術(shù)
文件頁數(shù)： 37/79頁
文件大?。?/td> 2191K
代理商： S29GL064N90TAI032
November 16, 2007 S29GL-N_01_09
S29GL-N MirrorBit
Flash Family
37
D a t a
S h e e t
8.20.2
Write Pulse
Glitch
Protection
Noise pulses of less than 3 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
8.20.3
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a logical one.
8.20.4
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power up, the device does not accept commands on the rising
edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
9.
Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h, any time the device is ready to read array data. The system can read CFI information at the addresses
given in
Table 9.1 on page 37
–
Table 9.4 on page 40
. To terminate reading CFI data, the system must write
the reset command.
The system can also write the CFI query command when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read CFI data at the addresses given in
Table 9.1 on page 37
–
Table 9.4 on page 40
. The system must write the reset command to return the device
to reading array data.
For further information, please refer to the CFI Specification and CFI Publication 100. Alternatively, contact
your sales representative for copies of these documents.
Table 9.1
CFI Query Identification String
Addresses (x16)
Addresses (x8)
Data
Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none
exists)
相關(guān)PDF資料
PDF描述
S29GL064N90TAI040 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90TAI042 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90TAI060 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90TFI070 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90TFI072 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL064N90TAI040 制造商:Spansion 功能描述:64 MEGABIT, 32 MEGABIT 3.0-VOLT - Trays
S29GL064N90TAI060 制造商:Spansion 功能描述:MEMORY, 4M X 16 FLASH - Trays
S29GL064N90TFI010 功能描述:閃存 64Mb 3V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N90TFI010 制造商:Spansion 功能描述:MirrorBit Flash Memory
S29GL064N90TFI013 制造商:Spansion 功能描述:64 MEGABIT3.0-VOLT ONLY PAGE MODE FLASH MEMORY - Tape and Reel
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