參數(shù)資料
型號: S29GL064N90FFIV12
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述: 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
封裝: 13 X 11 MM, LEAD FREE, FBGA-64
文件頁數(shù): 3/79頁
文件大?。?/td> 2191K
代理商: S29GL064N90FFIV12
Publication Number
S29GL-N_01
Revision
09
Issue Date
November 16, 2007
Distinctive Characteristics
Architectural Advantages
Single power supply operation
Manufactured on 110 nm MirrorBit process technology
Secured Silicon
Sector region
– 128-word/256-byte sector for permanent, secure identification
through an 8-word/16-byte random Electronic Serial Number,
accessible through a command sequence
– Programmed and locked at the factory or by the customer
Flexible sector architecture
– 64Mb (uniform sector models): One hundred twenty-eight 32 Kword
(64 KB) sectors
– 64 Mb (boot sector models): One hundred twenty-seven 32 Kword
(64 KB) sectors + eight 4Kword (8KB) boot sectors
– 32 Mb (uniform sector models): Sixty-four 32Kword (64 KB) sectors
– 32 Mb (boot sector models): Sixty-three 32Kword (64 KB) sectors +
eight 4Kword (8KB) boot sectors
Enhanced VersatileI/O
Control
– All input levels (address, control, and DQ input levels) and outputs
are determined by voltage on V
IO
input. V
IO
range is 1.65 to V
CC
Compatibility with JEDEC standards
– Provides pinout and software compatibility for single-power supply
flash, and superior inadvertent write protection
100,000 erase cycles typical per sector
20-year data retention typical
Performance Characteristics
High performance
– 90 ns access time
– 8-word/16-byte page read buffer
– 25 ns page read time
– 16-word/32-byte write buffer which reduces overall programming
time for multiple-word updates
Low power consumption
– 25 mA typical active read current
– 50 mA typical erase/program current
– 10 μA typical standby mode current
Package options
– 48-pin TSOP
– 56-pin TSOP
– 64-ball Fortified BGA
– 48-ball fine-pitch BGA
Software & Hardware Features
Software features
– Advanced Sector Protection: offers Persistent Sector Protection and
Password Sector Protection
– Program Suspend & Resume: read other sectors before
programming operation is completed
– Erase Suspend & Resume: read/program other sectors before an
erase operation is completed
– Data# polling & toggle bits provide status
– CFI (Common Flash Interface) compliant: allows host system to
identify and accommodate multiple flash devices
– Unlock Bypass Program command reduces overall multiple-word
programming time
Hardware features
– WP#/ACC input accelerates programming time (when high voltage
is applied) for greater throughput during system production. Protects
first or last sector regardless of sector protection settings on uniform
sector models
– Hardware reset input (RESET#) resets device
– Ready/Busy# output (RY/BY#) detects program or erase cycle
completion
S29GL-N MirrorBit
Flash Family
S29GL064N, S29GL032N
64 Megabit, 32 Megabit
3.0 Volt-only Page Mode Flash Memory
Featuring 110 nm MirrorBit Process Technology
Data Sheet
相關PDF資料
PDF描述
S29GL064N90FFIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90FFIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90FFIV60 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90FFIV62 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90TAI010 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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