- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385796 > S29GL064N90BAI062 (Spansion Inc.) 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology PDF資料下載
參數(shù)資料
| 型號： | S29GL064N90BAI062 |
| 廠商： | Spansion Inc. |
| 英文描述： | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| 中文描述： | 64兆，32兆位3.0伏只頁面模式閃存具有110納米MirrorBit工藝技術(shù) |
| 文件頁數(shù)： | 52/79頁 |
| 文件大?。?/td> | 2191K |
| 代理商： | S29GL064N90BAI062 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁當(dāng)前第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁
52
S29GL-N MirrorBit
Flash Family
S29GL-N_01_09 November 16, 2007
D a t a
S h e e t
Table 10.2
Sector Protection Commands (x16)
Command Sequence
(Notes)
C
Bus Cycles (Notes
2
–
4
)
First
Second
Third
Fourth
Fifth
Sixth
Seventh
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
L
R
Command Set Entry
(Note 5)
3
555
AA
2AA
55
555
40
Program
(Note 6)
2
XX
A0
XXX
Data
Read
(Note 6)
1
00
Data
Command Set Exit
(Note 7)
2
XX
90
XX
00
P
P
Command Set Entry
(Note 5)
3
555
AA
2AA
55
555
60
Program
(Note 8)
2
XX
A0
PWAx
PWDx
Read
(Note 9)
4
XXX
PWD0
01
PWD1
02
PWD2
03
PWD3
Unlock
(Note 10)
7
00
25
00
03
00
PWD0
01
PWD1
02
PWD2
03
PWD3
00
29
Command Set Exit
(Note 7)
2
XX
90
XX
00
N
P
Command Set Entry
(Note 5)
3
555
AA
2AA
55
555
C0
PPB Program
(Note 11)
2
XX
A0
SA
00
All PPB Erase
(Notes
11
,
12
)
2
XX
80
00
30
PPB Status Read
1
SA
RD(0)
Command Set Exit
(Note 7)
2
XX
90
XX
00
G
S
F
Command Set Entry
(Note 5)
3
555
AA
2AA
55
555
50
PPB Lock Bit Set
2
XX
A0
XX
00
PPB Lock Bit Status Read
1
XXX
RD(0)
Command Set Exit
(Note 7)
2
XX
90
XX
00
V
P
Command Set Entry
(Note 5)
3
555
AA
2AA
55
555
E0
DYB Set
2
XX
A0
SA
00
DYB Clear
2
XX
A0
SA
01
DYB Status Read
1
SA
RD(0)
Command Set Exit
(Note 7)
2
XX
90
XX
00
Legend
X = Don’t care.
RA = Address of the memory location to be read.
SA = Sector Address. Any address that falls within a specified sector. See
Tables
8.2
–
8.8
for sector address ranges.
PWA = Password Address. Address bits A1 and A0 are used to select each 16-
bit portion of the 64-bit entity.
PWD = Password Data.
RD(0) = DQ0 protection indicator bit. If protected, DQ0 = 0. If unprotected,
DQ0 = 1.
Notes
1. All values are in hexadecimal.
2. Shaded cells indicate read cycles.
3. Address and data bits not specified in table, legend, or notes are don’t
cares (each hex digit implies 4 bits of data).
4. Writing incorrect address and data values or writing them in the improper
sequence may place the device in an unknown state. The system must
write the reset command to return the device to reading array data.
5. Entry commands are required to enter a specific mode to enable
instructions only available within that mode.
6. No unlock or command cycles required when bank is reading array data.
7. Exit command must be issued to reset the device into read mode; device
may otherwise be placed in an unknown state.
8. Entire two bus-cycle sequence must be entered for each portion of the
password.
9. Full address range is required for reading password.
10.Password may be unlocked or read in any order. Unlocking requires the full
password (all seven cycles).
11.ACC must be at V
IH
when setting PPB or DYB.
12.“All PPB Erase” command pre-programs all PPBs before erasure to prevent
over-erasure.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL064N90BAI070 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| S29GL064N90BAI072 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| S29GL064N90BAIV10 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| S29GL064N90BAIV12 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| S29GL064N90BAIV20 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL064N90BFI030 | 功能描述:閃存 64MB 2.7-3.6V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL064N90BFI033 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 90NS 64BGA - Tape and Reel |
| S29GL064N90BFI040 | 功能描述:閃存 64Mb 3V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL064N90BFI042 | 制造商:Spansion 功能描述: |
| S29GL064N90DAI010 | 制造商:Spansion 功能描述:64M FLASH MEMORY - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。