參數(shù)資料
型號(hào)： S29GL064N11TFIV62
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述： 4M X 16 FLASH 3V PROM, 110 ns, PDSO56
封裝： LEAD FREE, MO-142EC, TSOP-56
文件頁(yè)數(shù)： 42/79頁(yè)
文件大?。?/td> 2191K
代理商： S29GL064N11TFIV62
42
S29GL-N MirrorBit
Flash Family
S29GL-N_01_09 November 16, 2007
D a t a
S h e e t
10.3
Autoselect Command Sequence
The autoselect command sequence allows the host system to read several identifier codes at specific
addresses:
Note
The device ID is read over three cycles. SA = Sector Address
The autoselect command sequence is initiated by first writing on unlock cycle (two cycles). This is followed by
a third write cycle that contains the autoselect command. The device then enters the autoselect mode. The
system may read at any address any number of times without initiating another autoselect command
sequence:
The system must write the reset command to return to the read mode (or erase-suspend-read mode if the
device was previously in Erase Suspend).
10.4
Enter/Exit Secured Silicon Sector Command Sequence
The Secured Silicon Sector region provides a secured data area containing an 8-word/16-byte random
Electronic Serial Number (ESN). The system can access the Secured Silicon Sector region by issuing the
three-cycle Enter Secured Silicon Sector command sequence. The device continues to access the Secured
Silicon Sector region until the system issues the four-cycle Exit Secured Silicon Sector command sequence.
The Exit Secured Silicon Sector command sequence returns the device to normal operation.
Table 10.1
on page 51
and
Table 10.3 on page 53
show the address and data requirements for both command
sequences. See also
Secured Silicon Sector Flash Memory Region
on page 35
for further information.
Note
that the ACC function and unlock bypass modes are not available when the Secured Silicon Sector is
enabled.
10.4.1
Word Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
controls or timings. The device automatically provides internally generated program pulses and verifies the
programmed cell margin.
Table 10.1 on page 51
and
Table 10.3 on page 53
show the address and data
requirements for the word program command sequence, respectively.
When the Embedded Program algorithm is complete, the device then returns to the read mode and
addresses are no longer latched. The system can determine the status of the program operation by using
DQ7 or DQ6. Refer to the Write Operation Status section for information on these status bits. Any commands
written to the device during the Embedded Program Algorithm are ignored.
Note that the Secured Silicon
Sector, autoselect, and CFI functions are unavailable when a program operation is in progress.
Note that a
hardware reset
immediately terminates the program operation. The program command sequence should be
reinitiated once the device returns to the read mode, to ensure data integrity.
Programming is allowed in any sequence of address locations and across sector boundaries. Programming
to the same word address multiple times without intervening erases (incremental bit programming) requires a
modified programming method. For such application requirements, please contact your local Spansion
representative. Word programming is supported for backward compatibility with existing Flash driver software
and for occasional writing of individual words. Use of write buffer programming (see below) is strongly
recommended for general programming use when more than a few words are to be programmed. The
effective word programming time using write buffer programming is approximately four times shorter than the
single word programming time.
Identifier Code
A7:A0
(x16)
A6:A-1
(x8)
Manufacturer ID
00h
00h
Device ID, Cycle 1
01h
02h
Device ID, Cycle 2
0Eh
1Ch
Device ID, Cycle 3
0Fh
1Eh
Secured Silicon Sector Factory Protect
03h
06h
Sector Protect Verify
(SA)02h
(SA)04h
相關(guān)PDF資料
PDF描述
S29GL064N90BAI010 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BAI012 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BAI020 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BFI030 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BFI032 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL064N11TFIV73 制造商:Spansion 功能描述:64M (4MX16) 3V REG, MIRRORBIT, FBGA63, IND - Tape and Reel
S29GL064N11WEI039 制造商:Spansion 功能描述:S29GL064N KNOWN GOOD DIE IN WAFER FORM, 64 MBIT, - Trays
S29GL064N90BAI040 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 90NS 48FBGA - Trays
S29GL064N90BFI030 功能描述:閃存 64MB 2.7-3.6V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N90BFI033 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 90NS 64BGA - Tape and Reel
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