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  • 參數(shù)資料
    型號: S29GL064N11BFI070
    廠商: Spansion Inc.
    英文描述: 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
    中文描述: 64兆,32兆位3.0伏只頁面模式閃存具有110納米MirrorBit工藝技術(shù)
    文件頁數(shù): 69/79頁
    文件大?。?/td> 2191K
    代理商: S29GL064N11BFI070
    November 16, 2007 S29GL-N_01_09
    S29GL-N MirrorBit
    Flash Family
    69
    D a t a
    S h e e t
    Figure 15.7
    Chip/Sector Erase Operation Timings
    Notes
    1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see
    Write Operation Status on page 55
    .)
    2. Illustration shows device in word mode.
    Figure 15.8
    Data# Polling Timings (During Embedded Algorithms)
    Note
    VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
    OE#
    CE#
    Addresses
    V
    CC
    WE#
    Data
    2AAh
    SA
    t
    AH
    t
    WP
    t
    WC
    t
    AS
    t
    WPH
    555h for chip erase
    10 for Chip Erase
    30h
    t
    DS
    t
    VCS
    t
    CS
    t
    DH
    55h
    t
    CH
    In
    Progress
    Complete
    t
    WHWH2
    VA
    VA
    Erase Command Sequence (last two cycles)
    Read Status Data
    RY/BY#
    t
    RB
    t
    BUSY
    WE#
    CE#
    OE#
    High Z
    t
    OE
    High Z
    DQ7
    DQ0–DQ6
    RY/BY#
    t
    BUSY
    Complement
    True
    Addresses
    VA
    t
    CH
    VA
    VA
    Status Data
    Complement
    Status Data
    True
    Valid Data
    Valid Data
    t
    POLL
    t
    ACC
    t
    CE
    t
    OEH
    t
    DF
    t
    OH
    t
    RC
    相關(guān)PDF資料
    PDF描述
    S29GL064N11BFI072 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
    S29GL064N11BFIV10 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
    S29GL064N11BFIV12 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
    S29GL064N11BFIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
    S29GL064N11FAIV60 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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