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  • 參數(shù)資料
    型號(hào): S29GL064M90TFIR20
    廠商: SPANSION LLC
    元件分類: DRAM
    英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
    中文描述: 4M X 16 FLASH 3V PROM, 90 ns, PDSO56
    封裝: LEAD FREE, MO-142EC, TSOP-56
    文件頁數(shù): 141/160頁
    文件大?。?/td> 2142K
    代理商: S29GL064M90TFIR20
    April 30, 2004 S29GLxxxM_00A5
    S29GLxxxM MirrorBit
    TM
    Flash Family
    141
    P r e l i m i n a r y
    AC Characteristics
    Alternate CE# Controlled Erase and Program Operations-S29GL032M
    Notes:
    1.
    2.
    3.
    4.
    Not 100% tested.
    See the “Erase and Programming Performance” section for more information.
    For 1–16 words/1–32 bytes programmed.
    If a program suspend command is issued within t
    , the device requires t
    before reading status data, once programming has resumed
    (that is, the program resume command has been written). If the suspend command was issued after t
    POLL
    , status data is available
    immediately after programming has resumed. See Figure 23.
    Parameter
    Speed Options
    Unit
    JEDEC
    Std.
    Description
    90
    10
    11
    t
    AVAV
    t
    WC
    Write Cycle Time (Note 1)
    Min
    90
    100
    110
    ns
    t
    AVWL
    t
    AS
    Address Setup Time
    Min
    0
    ns
    t
    ELAX
    t
    AH
    Address Hold Time
    Min
    45
    ns
    t
    DVEH
    t
    DS
    Data Setup Time
    Min
    35
    ns
    t
    EHDX
    t
    DH
    Data Hold Time
    Min
    0
    ns
    t
    GHEL
    t
    GHEL
    Read Recovery Time Before Write
    (OE# High to WE# Low)
    Min
    0
    ns
    t
    WLEL
    t
    WS
    WE# Setup Time
    Min
    0
    ns
    t
    EHWH
    t
    WH
    WE# Hold Time
    Min
    0
    ns
    t
    ELEH
    t
    CP
    CE# Pulse Width
    Min
    35
    ns
    t
    EHEL
    t
    CPH
    CE# Pulse Width High
    Min
    25
    ns
    t
    WHWH1
    t
    WHWH1
    Write Buffer Program Operation (Notes 2, 3)
    Typ
    240
    μs
    Single Word Program Operation (Note 2)
    Typ
    60
    Accelerated Single Word Program Operation (Note 2)
    Typ
    54
    t
    WHWH2
    t
    WHWH2
    Sector Erase Operation (Note 2)
    Typ
    0.5
    sec
    t
    RH
    RESET# High Time Before Write
    Min
    50
    ns
    t
    POLL
    Program Valid before Status Polling (Note 4)
    Max
    4
    μs
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