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參數資料
| 型號： | S29GL064M90TCIR00 |
| 廠商： | Spansion Inc. |
| 英文描述： | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| 中文描述： | 256,128,64,32，3.0兆伏安只頁面模式閃存具有0.23レ米MirrorBit工藝技術 |
| 文件頁數： | 75/116頁 |
| 文件大?。?/td> | 1656K |
| 代理商： | S29GL064M90TCIR00 |
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October 10, 2006 S29GL-M_00_B6
S29GL-M MirrorBit
TM
Flash Family
73
D a t a S h e e t
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6
toggles for approximately 100 μs, then returns to reading array data. If not all selected sectors
are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the
selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or
is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm
is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops tog-
gling. However, the system must also use DQ2 to determine which sectors are erasing or erase-
suspended. Alternatively, the system can use DQ7 (see the subsection on DQ7: Data# Polling).
If a program address falls within a protected sector, DQ6 toggles for approximately 1 μs after the
program command sequence is written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embed-
ded Program algorithm is complete.
Table 36
shows the outputs for Toggle Bit I on DQ6.
Figure 8
shows the toggle bit algorithm.
Figure 20
shows the toggle bit timing diagrams.
Figure 21
shows the differences between DQ2
and DQ6 in graphical form. Also, see
DQ2: Toggle Bit II
.
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| S29GL064M90TCIR02 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TCIR03 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TCIR10 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
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| S29GL032M | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S29GL064M90TFIR20 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray |
| S29GL064M90TFIR30 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray |
| S29GL064M90TFIR4 | 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC |
| S29GL064M90TFIR40 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC |
| S29GL064M90TFIR60 | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 64M-Bit 4M x 16 90ns 48-Pin TSOP Tray |
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