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參數(shù)資料
| 型號： | S29GL064M90TAIR40 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| 中文描述： | 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | MO-142EC, TSOP-48 |
| 文件頁數(shù)： | 6/116頁 |
| 文件大小： | 1656K |
| 代理商： | S29GL064M90TAIR40 |
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4
S29GL-M MirrorBit
TM
Flash Family
S29GL-M_00_B6 October 10, 2006
D a t a S h e e t
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . .77
Figure 9. Maximum Negative Overshoot Waveform................. 77
Figure 10. Maximum Positive Overshoot Waveform................. 77
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . .78
CMOS Compatible ............................................................................................78
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . .79
Figure 11. Test Setup ......................................................... 79
Table 37. Test Specifications ............................................... 79
Key to Switching Waveforms . . . . . . . . . . . . . . . .79
Figure 12. Input Waveforms and Measurement Levels............. 79
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . .80
Read-Only Operations—S29GL256M Only ...............................................80
Read-Only Operations—S29GL128M only ................................................80
Read-Only Operations—S29GL064M Only ...............................................81
Read-Only Operations—S29GL032M only ................................................82
Figure 13. Read Operation Timings....................................... 82
Figure 14. Page Read Timings.............................................. 83
Hardware Reset (RESET#) ...............................................................................83
Figure 15. Reset Timings..................................................... 84
Erase and Program Operations—S29GL256M Only ...............................85
Erase and Program Operations—S29GL128M Only ...............................86
Erase and Program Operations—S29GL064M Only ..............................87
Erase and Program Operations—S29GL032M Only ..............................88
Figure 16. Program Operation Timings .................................. 89
Figure 17. Accelerated Program Timing Diagram .................... 89
Figure 18. Chip/Sector Erase Operation Timings..................... 90
Figure 19. Data# Polling Timings
(During Embedded Algorithms) ............................................ 90
Figure 20. Toggle Bit Timings (During Embedded Algorithms) .. 91
Figure 21. DQ2 vs. DQ6 ...................................................... 91
Temporary Sector Unprotect .........................................................................91
Figure 22. Temporary Sector Group Unprotect Timing Diagram 92
Figure 23. Sector Group Protect and Unprotect Timing Diagram 92
Alternate CE# Controlled Erase and Program Operations—
S29GL256M ..........................................................................................................93
Alternate CE# Controlled Erase and Program Operations—
S29GL128M ...........................................................................................................94
Alternate CE# Controlled Erase and Program Operations—
S29GL064M ..........................................................................................................95
Alternate CE# Controlled Erase and Program Operations—
S29GL032M ..........................................................................................................96
Figure 24. Alternate CE# Controlled Write (Erase/
Program) Operation Timings ............................................... 97
Erase and Programming Performance . . . . . . . . .98
TSOP Pin and BGA Package Capacitance . . . . . .98
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . .99
TS040—40-Pin Standard Thin Small Outline Package (TSOP) ............99
TSR040—40-Pin Standard and Reverse Thin Small Outline Package
(TSOP) .................................................................................................................100
TS048—48-Pin Standard and Reverse Thin Small Outline Package
(TSOP) ...................................................................................................................101
TSR048—48-Pin Standard and Reverse Thin Small Outline Package
(TSOP) ..................................................................................................................102
TS056/TSR056—56-Pin Standard and Reverse Thin Small Outline Pack-
age (TSOP) ..........................................................................................................103
LAA064—64-Ball Fortified Ball Grid Array (FBGA) ..............................104
LAC064—64-Pin 18 x 12 mm Package .........................................................105
FBA048—48-Pin 6.15 x 8.15 mm Package ...................................................106
FBC048—48-Pin 8 x 9 mm Package ............................................................107
FBE063—63-Pin 12 x 11 mm Package ...........................................................108
FPT-48P-M19 ......................................................................................................109
FPT-56P-M01 .......................................................................................................109
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 110
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL064M90TAIR42 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR43 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR70 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR72 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR73 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL064M90TAIR42 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 90NS 48TSOP - Tape and Reel |
| S29GL064M90TAIR60 | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 64M-Bit 4M x 16 90ns 48-Pin TSOP Tray |
| S29GL064M90TAIR70 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 4M x 16 90ns 48-Pin TSOP Tray |
| S29GL064M90TFIR20 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray |
| S29GL064M90TFIR30 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray |
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