- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄192300 > S29GL032M10TAIR22 (SPANSION LLC) MirrorBit Flash Family PDF資料下載
參數(shù)資料
| 型號： | S29GL032M10TAIR22 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | MirrorBit Flash Family |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | MO-142-EC, TSOP-56 |
| 文件頁數(shù)： | 5/160頁 |
| 文件大?。?/td> | 4727K |
| 代理商： | S29GL032M10TAIR22 |
第1頁第2頁第3頁第4頁當前第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁第125頁第126頁第127頁第128頁第129頁第130頁第131頁第132頁第133頁第134頁第135頁第136頁第137頁第138頁第139頁第140頁第141頁第142頁第143頁第144頁第145頁第146頁第147頁第148頁第149頁第150頁第151頁第152頁第153頁第154頁第155頁第156頁第157頁第158頁第159頁第160頁
102
S29GLxxxM MirrorBitTM Flash Family
S29GLxxxM_00A5 April 30, 2004
Pr e l i m i n a r y
All addresses are latched on the falling edge of WE# or CE#, whichever happens
later. All data is latched on the rising edge of WE# or CE#, whichever happens
first. Refer to the AC Characteristics section for timing diagrams.
Reading Array Data
The device is automatically set to reading array data after device power-up. No
commands are required to retrieve data. The device is ready to read array data
after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the
erase-suspend-read mode, after which the system can read data from any non-
erase-suspended sector. After completing a programming operation in the Erase
Suspend mode, the system may once again read array data with the same ex-
ception. See the Erase Suspend/Erase Resume Commands section for more
information.
The system must issue the reset command to return the device to the read (or
erase-suspend-read) mode if DQ5 goes high during an active program or erase
operation, or if the device is in the autoselect mode. See the next section, Reset
Command, for more information.
See also Requirements for Reading Array Data in the Device Bus Operations sec-
tion for more information. The Read-Only Operations–“AC Characteristics”
section on page 124 provides the read parameters, and Figure 13 shows the tim-
ing diagram.
Reset Command
Writing the reset command resets the device to the read or erase-suspend-read
mode. Address bits are don’t cares for this command.
The reset command may be written between the sequence cycles in an erase
command sequence before erasing begins. This resets the device to the read
mode. Once erasure begins, however, the device ignores reset commands until
the operation is complete.
The reset command may be written between the sequence cycles in a program
command sequence before programming begins. This resets the device to the
read mode. If the program command sequence is written while the device is in
the Erase Suspend mode, writing the reset command returns the device to the
erase-suspend-read mode. Once programming begins, however, the device ig-
nores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect
command sequence. Once in the autoselect mode, the reset command must be
written to return to the read mode. If the device entered the autoselect mode
while in the Erase Suspend mode, writing the reset command returns the device
to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command
returns the device to the read mode (or erase-suspend-read mode if the device
was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Programming operation, the sys-
tem must write the Write-to-Buffer-Abort Reset command sequence to reset the
device for the next operation.
相關PDF資料 |
PDF描述 |
|---|---|
| S29GL032M10TAIR32 | MirrorBit Flash Family |
| S29GL032M10TAIR42 | CAP .1UF 1000V CER 10% X7R RADL |
| S29GL032M11TCIR42 | 2M X 16 FLASH 3V PROM, 110 ns, PDSO48 |
| S29GL064A10BAIW12 | 4M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| S29GL128N11FAIVH0 | 16M X 16 FLASH 3V PROM, 110 ns, PBGA64 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL032M10TAIR23 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10TAIR30 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10TAIR32 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10TAIR33 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10TAIR40 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
發(fā)布緊急采購，3分鐘左右您將得到回復。