參數(shù)資料
型號: S29GL032M10FBCR50
廠商: Spansion Inc.
英文描述: MirrorBit Flash Family
中文描述: MirrorBit閃存系列
文件頁數(shù): 134/159頁
文件大?。?/td> 2217K
代理商: S29GL032M10FBCR50
134
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00_B3 Octorber 18, 2004
D a t a s h e e t
Note:
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last
status read cycle, and array data read cycle.
Figure 20. Toggle Bit Timings (During Embedded Algorithms)
Note:
DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE#
to toggle DQ2 and DQ6.
Figure 21. DQ2 vs. DQ6
Temporary Sector Unprotect
Note:
Not 100% tested.
Parameter
All Speed Options
JEDEC
Std
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
OE#
CE#
WE#
Addresses
t
OEH
t
DH
t
AHT
t
ASO
t
OEPH
t
OE
Valid Data
(first read)
(second read)
(stops toggling)
t
CEPH
t
AHT
t
AS
DQ6 / DQ2
Valid Data
Valid
Status
Valid
Status
Valid
Status
RY/BY#
Enter
Embedded
Erasing
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
相關PDF資料
PDF描述
S29GL064N11FFIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV60 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV62 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11FAI010 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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參數(shù)描述
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