參數(shù)資料
型號: S29GL032M10BCCR32
廠商: Spansion Inc.
英文描述: 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology
中文描述: 256,128,64,32,3.0兆伏安只頁面模式閃存具有0.23レ米MirrorBit工藝技術
文件頁數(shù): 93/116頁
文件大?。?/td> 1656K
代理商: S29GL032M10BCCR32
October 10, 2006 S29GL-M_00_B6
S29GL-M MirrorBit
TM
Flash Family
91
D a t a S h e e t
AC Characteristics
Note:
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last
status read cycle, and array data read cycle.
Figure 20. Toggle Bit Timings (During Embedded Algorithms)
Note:
DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to
toggle DQ2 and DQ6.
Figure 21. DQ2 vs. DQ6
Temporary Sector Unprotect
Note:
Not 100% tested.
Parameter
Description
All Speed Options
J EDEC
Std
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector Unprotect
Min
4
μs
OE#
CE#
WE#
Addresses
t
OEH
t
DH
t
AHT
t
ASO
t
OEPH
t
OE
Valid Data
(first read)
(second read)
(stops toggling)
t
CEPH
t
AHT
t
AS
DQ6 / DQ2
Valid Data
Valid
Status
Valid
Status
Valid
Status
RY/BY#
Enter
Embedded
Erasing
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
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