參數(shù)資料
        型號: S29GL032A30FFIR20
        廠商: Spansion Inc.
        英文描述: 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
        中文描述: 64兆,32兆和16兆位3.0伏只頁面模式閃存,含有200納米MirrorBit工藝技術(shù)
        文件頁數(shù): 59/95頁
        文件大?。?/td> 2389K
        代理商: S29GL032A30FFIR20
        September 10, 2007 S29GL-A_00_A11
        S29GL-A
        59
        D a t a
        S h e e t
        10. Sector Erase Command Sequence
        Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two
        unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed
        by the address of the sector to be erased, and the sector erase command.
        Table 10.2 on page 61
        and
        Table 10.1 on page 62
        shows the address and data requirements for the sector erase command sequence.
        The device does
        not
        require the system to preprogram prior to erase. The Embedded Erase algorithm
        automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase.
        The system is not required to provide any controls or timings during these operations.
        After the command sequence is written, a sector erase time-out of 50 μs occurs. During the time-out period,
        additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may
        be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between
        these additional cycles must be less than 50 μs, otherwise erasure may begin. Any sector erase address and
        command following the exceeded time-out may or may not be accepted. It is recommended that processor
        interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be
        re-enabled after the last Sector Erase command is written.
        Any command other than Sector Erase or
        Erase Suspend during the time-out period resets the device to the read mode.
        Note that the Secured
        Silicon Sector, autoselect, and CFI functions are unavailable when an erase operation is in progress.
        The system must rewrite the command sequence and any additional addresses and commands.
        The system can monitor DQ3 to determine if the sector erase timer has timed out (See
        DQ3: Sector Erase
        Timer
        on page 67
        ). The time-out begins from the rising edge of the final WE# pulse in the command
        sequence.
        When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses
        are no longer latched. The system can determine the status of the erase operation by reading DQ7, DQ6, or
        DQ2 in the erasing sector. Refer to
        Write Operation Status
        on page 63
        for information on these status bits.
        Once the sector erase operation begins, only the Erase Suspend command is valid. All other commands are
        ignored. However, note that a
        hardware reset
        immediately
        terminates the erase operation. If that occurs, the
        sector erase command sequence should be reinitiated once the device returns to reading array data, to
        ensure data integrity.
        Figure 10.1
        illustrates the algorithm for the erase operation. Refer to
        Table 16.5 on page 76
        for parameters,
        and
        Figure 16.7 on page 80
        for timing diagrams.
        Figure 10.1
        Erase Operation
        Notes
        1. See
        Table 10.2 on page 61
        and
        Table 10.1 on page 62
        for program command sequence.
        2. See
        DQ3: Sector Erase Timer on page 67
        for information on the sector erase timer.
        S
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        S
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        No
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