- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄365396 > S29GL01GP13TFIV12 (Spansion Inc.) 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology PDF資料下載
參數(shù)資料
| 型號(hào)： | S29GL01GP13TFIV12 |
| 廠(chǎng)商： | Spansion Inc. |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 3.0伏只頁(yè)面模式閃存具有90納米MirrorBit工藝技術(shù) |
| 文件頁(yè)數(shù)： | 50/71頁(yè) |
| 文件大?。?/td> | 990K |
| 代理商： | S29GL01GP13TFIV12 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)當(dāng)前第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)
48
S29GL-P MirrorBit
TM
Flash Family
S29GL-P_00_A3 November21,2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Figure 11.2
Maximum Positive Overshoot Waveform
11.2
Operating Ranges
Notes
1. Operating ranges define those limits between which the functionality of the device is guaranteed.
2. See also
Ordering Information on page 5
.
3. For valid V
CC
/V
IO
range combinations, see
Ordering Information on page 5
. The I/Os do not operate at 3 V when V
IO
= 1.8 V.
11.3
Test Conditions
Figure 11.3
Test Setup
Note
Diodes are IN3064 or equivalent.
20 n
s
20 n
s
20 n
s
V
CC
+2.0 V
V
CC
+0.5 V
+2.0 V
Specifications
Range
Ambient Temperature (TA), Industrial (I) Device
–40°C to +85°C
Supply Voltages
V
CC
+2.7 V to 3.6 V or
+3.0 V to 3.6 V
V
IO
Supply Voltages
V
IO
+1.65 V to V
CC
2.7 k
Ω
C
L
6.2 k
Ω
3.3 V
Device
Under
Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL01GP13TFIV13 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11FAI010 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11FAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11FAI013 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P11FAI020 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL01GP13TFIV13 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13TFIV20 | 功能描述:閃存 1G 3.0V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL01GP90FAI010 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP90FAI012 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP90FAIR10 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。