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參數(shù)資料
| 型號(hào)： | S29GL01GP13TFI020 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 1G X 1 FLASH 3V PROM, 130 ns, PDSO56 |
| 封裝： | 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 |
| 文件頁(yè)數(shù)： | 58/71頁(yè) |
| 文件大?。?/td> | 990K |
| 代理商： | S29GL01GP13TFI020 |
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56
S29GL-P MirrorBit
TM
Flash Family
S29GL-P_00_A3 November21,2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Figure 11.11
Chip/Sector Erase Operation Timings
Notes
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status.”
2. These waveforms are for the word mode
Figure 11.12
Data# Polling Timings (During Embedded Algorithms)
Notes
1. VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
2. t
OE
for data polling is 45 ns when V
IO
= 1.65 to 2.7 V and is 35 ns when V
IO
= 2.7 to 3.6 V
OE#
CE#
Addresses
V
CC
WE#
Data
2AAh
SA
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
t
RB
t
BUSY
WE#
CE#
OE#
High Z
t
OE
High Z
DQ7
DQ6–DQ0
RY/BY#
t
BUSY
Complement
True
Addresses
VA
t
OEH
t
CE
t
CH
t
OH
t
DF
VA
VA
Status Data
Complement
Status Data
True
Valid Data
Valid Data
t
ACC
t
RC
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| S29GL01GP13TFI022 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13TFI023 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13TFIV10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13TFIV12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13TFIV13 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL01GP13TFI022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13TFI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13TFIV10 | 制造商:Spansion 功能描述:NOR FLASH PARALLEL 3V/3.3V 1GBIT 128M/64M X 8BIT/16BIT 130NS - Trays |
| S29GL01GP13TFIV12 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13TFIV13 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
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