參數(shù)資料
    型號(hào): S29GL01GP13TAI012
    廠商: Spansion Inc.
    英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
    中文描述: 3.0伏只頁面模式閃存具有90納米MirrorBit工藝技術(shù)
    文件頁數(shù): 52/71頁
    文件大?。?/td> 990K
    代理商: S29GL01GP13TAI012
    50
    S29GL-P MirrorBit
    TM
    Flash Family
    S29GL-P_00_A3 November21,2006
    D a t a
    S h e e t
    ( A d v a n c e
    I n f o r m a t i o n )
    11.6
    DC Characteristics
    Notes
    1. The I
    CC
    current listed is typically less than 2 mA/MHz, with OE# at V
    IH
    .
    2. I
    CC
    active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress.
    3. Not 100% tested.
    4. Automatic sleep mode enables the lower power mode when addresses remain stable tor t
    ACC
    + 30 ns.
    5. V
    IO
    = 1.65–3.6 V
    6. V
    CC
    = 3 V and V
    IO
    = 3V or 1.8V. When V
    IO
    is at 1.8V, I/O pins cannot operate at 3V.
    Table 11.2
    S29GL-P DC Characteristics (CMOS Compatible)
    Parameter
    Symbol
    Parameter Description
    (Notes)
    Test Conditions
    Min
    Typ
    Max
    Unit
    I
    LI
    Input Load Current
    (1)
    V
    IN
    = V
    SS
    to V
    CC
    V
    CC
    = V
    CC
    max
    WP/ACC
    ±2.0
    μA
    Others
    ±1.0
    I
    LIT
    I
    LO
    A9 Input Load Current
    V
    CC
    = V
    CC max
    ; A9 = 12.5 V
    V
    OUT
    = V
    SS
    to V
    CC ,
    V
    CC
    = V
    CC max
    CE# = V
    IL
    , OE# = V
    IH
    , V
    CC
    = V
    CCmax
    ,
    f
    =
    1 MHz
    CE# = V
    IL
    , OE# = V
    IH
    , V
    CC
    = V
    CCmax
    ,
    f
    =
    5 MHz
    CE# = V
    IL
    , OE# = V
    IH
    , V
    CC
    = V
    CCmax
    ,
    f
    =
    10 MHz
    CE# = V
    IL,
    OE# = V
    IH
    CE# = V
    IL,
    OE# = V
    IH,
    V
    CC
    = V
    CCmax
    ,
    f
    = 10 MHz
    CE# = V
    IL
    , OE# = V
    IH
    , V
    CC
    = V
    CCmax
    ,
    f
    = 33 MHz
    35
    μA
    Output Leakage Current
    ±1.0
    μA
    I
    CC1
    V
    CC
    Active Read Current
    (1)
    6
    20
    mA
    30
    50
    60
    100
    I
    IO2
    V
    IO
    Non-Active Output
    0.2
    10
    mA
    I
    CC2
    V
    CC
    Intra-Page Read Current
    (1)
    1
    10
    mA
    5
    20
    I
    CC3
    V
    CC
    Active Erase/
    Program Current (
    2
    ,
    3
    )
    CE# = V
    IL,
    OE# = V
    IH,
    V
    CC
    = V
    CCmax
    50
    90
    mA
    I
    CC4
    V
    CC
    Standby Current
    CE#, RESET# = V
    CC
    ± 0.3 V,
    OE# = V
    IH,
    V
    CC
    = V
    CCmax
    V
    IL
    = V
    SS
    + 0.3 V/-0.1V,
    V
    CC
    = V
    CCmax;
    V
    IL
    = V
    SS
    + 0.3 V/-0.1V,
    RESET# = V
    SS
    ± 0.3 V
    V
    CC
    = V
    CCmax
    , V
    IH
    = V
    CC
    ± 0.3 V,
    V
    IL
    = V
    SS
    + 0.3 V/-0.1V, WP#/ACC = V
    IH
    1
    5
    μA
    I
    CC5
    V
    CC
    Reset Current
    250
    500
    μA
    I
    CC6
    Automatic Sleep Mode
    (4)
    1
    5
    μA
    I
    ACC
    ACC Accelerated
    Program Current
    CE# = V
    IL,
    OE# = V
    IH,
    V
    CC
    = V
    CCmax,
    WP#/ACC = V
    HH
    WP#/ACC
    pin
    10
    20
    mA
    V
    CC
    pin
    50
    80
    V
    IL
    V
    IH
    V
    HH
    Input Low Voltage
    (5)
    –0.1
    0.3 x V
    IO
    V
    IO
    + 0.3
    12.5
    V
    Input High Voltage
    (5)
    0.7 x V
    IO
    11.5
    V
    Voltage for Program Acceleration V
    CC
    = 2.7 –3.6 V
    Voltage for Autoselect and
    Temporary Sector Unprotect
    V
    V
    ID
    V
    CC
    = 2.7 –3.6 V
    11.5
    12.5
    V
    V
    OL
    V
    OH
    V
    LKO
    Output Low Voltage
    (5)
    I
    OL
    = 100 μA
    I
    OH
    = -100 μA
    0.15 x V
    IO
    V
    Output High Voltage
    (5)
    0.85 x V
    IO
    2.3
    V
    Low V
    CC
    Lock-Out Voltage
    (3)
    2.5
    V
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