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| 型號(hào)： | S29GL01GP13FFI012 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 1G X 1 FLASH 3V PROM, 130 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 |
| 文件頁(yè)數(shù)： | 39/71頁(yè) |
| 文件大?。?/td> | 990K |
| 代理商： | S29GL01GP13FFI012 |
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November21,2006 S29GL-P_00_A3
S29GL-P MirrorBit
TM
Flash Family
37
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
8.
Advanced Sector Protection/Unprotection
The Advanced Sector Protection/Unprotection feature disables or enables programming or erase operations
in any or all sectors and can be implemented through software and/or hardware methods, which are
independent of each other. This section describes the various methods of protecting data stored in the
memory array. An overview of these methods in shown in
Figure 8.1
.
Figure 8.1
Advanced Sector Protection/Unprotection
Hardware Methods
Software Methods
WP#/ACC = V
IL
(Highe
s
t or Lowe
s
t
S
ector Locked)
P
ass
word Method
(DQ2)
Per
s
i
s
tent Method
(DQ1)
Lock Regi
s
ter
(One Time Progr
a
mm
ab
le)
PPB Lock Bit
1,2,
3
64-
b
it P
ass
word
(One Time Protect)
1 = PPB
s
Unlocked
0 = PPB
s
Locked
Memory Arr
a
y
S
ector 0
S
ector 1
S
ector 2
S
ector N-2
S
ector N-1
S
ector N
3
PPB 0
PPB 1
PPB 2
PPB N-2
PPB N-1
PPB N
Per
s
i
s
tent
Protection Bit
(PPB)
4,5
DYB 0
DYB 1
DYB 2
DYB N-2
DYB N-1
DYB N
Dyn
a
mic
Protection Bit
(DYB)
6,7,
8
6. 0 =
S
ector Protected,
1 =
S
ector Unprotected.
7. Protect effective only if PPB Lock Bit i
s
u
nlocked
a
nd corre
s
ponding PPB i
s
“1
”
(
u
nprotected).
8
. Vol
a
tile Bit
s
: def
au
lt
s
to
us
er choice
u
pon
power-
u
p (
s
ee ordering option
s
).
4. 0 =
S
ector Protected,
1 =
S
ector Unprotected.
5. PPB
s
progr
a
mmed individ
ua
lly,
bu
t cle
a
red collectively
1. Bit i
s
vol
a
tile,
a
nd def
au
lt
s
to
“
1
”
on re
s
et.
2. Progr
a
mming to
“
0
”
lock
s
a
ll PPB
s
to their
c
u
rrent
s
t
a
te.
3
. Once progr
a
mmed to
“
0
”
, re
qu
ire
s
h
a
rdw
a
re
re
s
et to
u
nlock.
3
. N = Highe
s
t Addre
ss
S
ector.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL01GP13FFI013 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FFI020 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FFI022 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FFI023 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FFIV10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL01GP13FFI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FFI020 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FFI022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FFI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP13FFIV10 | 功能描述:閃存 1GB 2.7-3.6V 130ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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