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| 型號(hào)： | S29GL01GP12TFI022 |
| 廠商： | Spansion Inc. |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 3.0伏只頁面模式閃存具有90納米MirrorBit工藝技術(shù) |
| 文件頁數(shù)： | 53/71頁 |
| 文件大小： | 990K |
| 代理商： | S29GL01GP12TFI022 |
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November21,2006 S29GL-P_00_A3
S29GL-P MirrorBit
TM
Flash Family
51
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
11.7
AC Characteristics
11.7.1
S29GL-P Read-Only Operations
Notes
1. CE#, OE# = V
IL
2. OE# = V
IL
3. Not 100% tested.
4. See
Figure 11.3
and
Table 11.1
for test specifications.
5. Unless otherwise indicated, AC specifications for 110 ns speed options are tested with V
IO
= V
CC
= 2.7 V. AC specifications for 110 ns speed options are tested
with V
IO
= 1.8 V and V
CC
= 3.0 V.
Figure 11.5
Read Operation Timings
Table 11.3
S29GL-P Read-Only Operations
Parameter
Description
(Notes)
Test Setup
Speed Options
JEDEC
Std.
110
110
120
130
Unit
t
AVAV
t
RC
Read Cycle Time
V
IO
= V
CC
= 2.7 V
V
IO
= 1.65 V to V
CC
, V
CC
= 3 V
V
IO
= V
CC
= 2.7 V
V
IO
= 1.65 V to V
CC
, V
CC
= 3 V
V
IO
= V
CC
= 2.7 V
V
IO
= 1.65 V to V
CC
, V
CC
= 3 V
Min
110
120
ns
110
130
t
AVQV
t
ACC
Address to Output Delay
(1)
Max
110
120
ns
110
130
ns
t
ELQV
t
CE
Chip Enable to Output Delay
(2)
Max
110
120
ns
110
130
ns
t
PACC
t
OE
t
DF
t
DF
Page Access Time
Max
25
25
25
25
ns
t
GLQV
t
EHQZ
t
GHQZ
Output Enable to Output Delay
Max
25
30
25
30
ns
Chip Enable to Output High Z
(3)
Max
20
ns
Output Enable to Output High Z
(3)
Max
20
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
t
OEH
Output Enable Hold Time
(3)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
t
CEH
Chip Enable Hold Time
Read
Min
35
ns
t
OH
t
CE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
t
RC
t
ACC
t
OEH
t
RH
t
OE
t
RH
0 V
RY/BY#
RESET#
t
DF
t
CEH
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| S29GL01GP13FAI010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
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