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參數(shù)資料
| 型號(hào)： | S29GL01GP12TFI013 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 1G X 1 FLASH 3V PROM, 120 ns, PDSO56 |
| 封裝： | 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 |
| 文件頁(yè)數(shù)： | 28/71頁(yè) |
| 文件大?。?/td> | 990K |
| 代理商： | S29GL01GP12TFI013 |
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26
S29GL-P MirrorBit
TM
Flash Family
S29GL-P_00_A3 November21,2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Figure 7.3
Sector Erase Operation
Notes
1. See
Table 12.1 on page 61
for erase command sequence.
2. See the section on DQ3 for information on the sector erase timeout.
No
Write Unlock Cycle
s
:
Addre
ss
555h, D
a
t
a
AAh
Addre
ss
2AAh, D
a
t
a
55h
Write
S
ector Er
as
e Cycle
s
:
Addre
ss
555h, D
a
t
a
8
0h
Addre
ss
555h, D
a
t
a
AAh
Addre
ss
2AAh, D
a
t
a
55h
S
ector Addre
ss
, D
a
t
a
3
0h
Write Addition
a
l
S
ector Addre
ss
e
s
FAIL. Write re
s
et comm
a
nd
to ret
u
rn to re
a
ding
a
rr
a
y.
PA
SS
. Device ret
u
rn
s
to re
a
ding
a
rr
a
y.
W
a
it 4 m
s
(Recommended)
Perform Write Oper
a
tion
S
t
a
t
us
Algorithm
(see
Figure 7.4
)
S
elect
Addition
a
l
S
ector
s
Unlock Cycle 1
Unlock Cycle 2
Ye
s
Ye
s
Ye
s
Ye
s
Ye
s
No
No
No
No
L
as
t
S
ector
S
elected
Done
DQ5 = 1
Comm
a
nd Cycle 1
Comm
a
nd Cycle 2
Comm
a
nd Cycle
3
S
pecify fir
s
t
s
ector for er
asu
re
Error condition (Exceeded Timing Limit
s
)
S
t
a
t
us
m
a
y
b
e o
b
t
a
ined
b
y re
a
ding DQ7, DQ6
a
nd/or DQ2.
Poll DQ
3
.
DQ
3
= 1
E
a
ch
a
ddition
a
l cycle m
us
t
b
e written within t
S
EA
timeo
u
t
The ho
s
t
s
y
s
tem m
a
y monitor DQ
3
or w
a
it t
S
EA
to en
su
re
a
ccept
a
nce of er
as
e comm
a
nd
s
No limit on n
u
m
b
er of
s
ector
s
Comm
a
nd
s
other th
a
n Er
as
e
Sus
pend or
s
electing
a
ddition
a
l
s
ector
s
for er
asu
re d
u
ring timeo
u
t re
s
et device to re
a
ding
a
rr
a
y
d
a
t
a
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL01GP12TFI020 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TFI022 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TFI023 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TFIV10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TFIV12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL01GP12TFI020 | 功能描述:閃存 1GB 2.7-3.6V 120ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL01GP12TFI020 | 制造商:Spansion 功能描述:Flash - NOR IC |
| S29GL01GP12TFI022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TFI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TFIV10 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 1GBIT 128MX8/64MX16 120NS 56TSOP - Trays |
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