參數(shù)資料
型號(hào)： S29GL01GP12FAI020
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 1G X 1 FLASH 3V PROM, 120 ns, PBGA64
封裝： 13 X 11 MM, 1 MM PITCH, FBGA-64
文件頁(yè)數(shù)： 31/71頁(yè)
文件大?。?/td> 990K
代理商： S29GL01GP12FAI020
November21,2006 S29GL-P_00_A3
S29GL-P MirrorBit
TM
Flash Family
29
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
7.7.6
Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt an embedded programming operation or a
“Write to Buffer” programming operation so that data can read from any non-suspended sector. When the
Program Suspend command is written during a programming process, the device halts the programming
operation within 15
μs maximum (5
μs typical) and updates the status bits. Addresses are “don't-cares” when
writing the Program Suspend command.
After the programming operation has been suspended, the system can read array data from any non-
suspended sector. The Program Suspend command may also be issued during a programming operation
while an erase is suspended. In this case, data may be read from any addresses not in Erase Suspend or
Program Suspend. If a read is needed from the Secured Silicon Sector area, then user must use the proper
command sequences to enter and exit this region.
The system may also write the Autoselect command sequence when the device is in Program Suspend
mode. The device allows reading Autoselect codes in the suspended sectors, since the codes are not stored
in the memory array. When the device exits the Autoselect mode, the device reverts to Program Suspend
mode, and is ready for another valid operation. See “Autoselect Command Sequence” for more information.
After the Program Resume command is written, the device reverts to programming. The system can
determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard
program operation. See “Write Operation Status” for more information.
The system must write the Program Resume command (address bits are “don't care”) to exit the Program
Suspend mode and continue the programming operation. Further writes of the Program Resume command
are ignored. Another Program Suspend command can be written after the device has resumed programming.
Software Functions and Sample Code
The following is a C source code example of using the program suspend function. Refer to the
Spansion Low
Level Driver User’s Guide
(available on
www.spansion.com
) for general information on Spansion Flash
memory software development guidelines.
/* Example: Program suspend command */
*( (UINT16 *)base_addr + 0x000 ) = 0x00B0; /* write suspend command */
The following is a C source code example of using the program resume function. Refer to the
Spansion Low
Level Driver User’s Guide
(available on
www.spansion.com
) for general information on Spansion Flash
memory software development guidelines.
/* Example: Program resume command */
*( (UINT16 *)base_addr + 0x000 ) = 0x0030; /* write resume command */
Table 7.12
Program Suspend
(LLD Function = lld_ProgramSuspendCmd)
Cycle
Operation
Word Address
Data
1
Write
Base + XXXh
00B0h
Table 7.13
Program Resume
(LLD Function = lld_ProgramResumeCmd)
Cycle
Operation
Word Address
Data
1
Write
Base + XXXh
0030h
相關(guān)PDF資料
PDF描述
S29GL01GP12FAI022 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12FAI023 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12FAIV10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12FAIV12 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12FAIV13 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL01GP12FAI022 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12FAI023 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12FAIV10 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12FAIV12 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12FAIV13 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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