參數(shù)資料
型號： S29CD016J1MQFI133
廠商： SPANSION LLC
元件分類： PROM
英文描述： 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
中文描述： 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
封裝： LEAD FREE, PLASTIC, MO-108CB-1, QFP-80
文件頁數(shù)： 72/76頁
文件大?。?/td> 1245K
代理商： S29CD016J1MQFI133
70
S29CD-J & S29CL-J Flash Family
S29CD-J_CL-J_00_B1 September27,2006
D a t a
S h e e t
( P r e l i m i n a r y )
Legend
Notes
Table 20.2
Sector Protection Command Definitions (x32 Mode)
Command (Notes)
C
Bus Cycles (Notes
1
–
4
)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Reset
1
XXX
F0
Secured Silicon Sector Entry
3
555
AA
2AA
55
555
88
Secured Silicon Sector Exit
4
555
AA
2AA
55
555
90
XX
00
Secured Silicon Protection
Bit Program (
5
,
6
)
6
555
AA
2AA
55
555
60
OW
68
OW
48
OW
RD(0)
Secured Silicon Protection Bit
Status
6
555
AA
2AA
55
555
60
OW
RD(0)
Password Program (
5
,
7
,
8
)
4
555
AA
2AA
55
555
38
PWA[0-1]
PWD[0-1]
Password Verify
4
555
AA
2AA
55
555
C8
PWA[0-1]
PWD[0-1]
Password Unlock (
7
,
8
)
5
555
AA
2AA
55
555
28
PWA[0-1]
PWD[0-1]
PPB Program (
5
,
6
)
6
555
AA
2AA
55
555
60
SG+WP
68
SG+WP
48
SG+WP
RD(0)
All PPB Erase (
5
,
9
,
10
)
6
555
AA
2AA
55
555
60
WP
60
WP
40
WP
RD(0)
PPB Status (
11
,
12
)
4
555
AA
2AA
55
BA+555
90
SA+X02
00/01
PPB Lock Bit Set
3
555
AA
2AA
55
555
78
PPB Lock Bit Status
4
555
AA
2AA
55
BA+555
58
SA
RD(1)
DYB Write (
7
)
4
555
AA
2AA
55
555
48
SA
X1
DYB Erase (
7
)
4
555
AA
2AA
55
555
48
SA
X0
DYB Status (12)
4
555
AA
2AA
55
BA+555
58
SA
RD(0)
PPMLB Program (
5
,
6
)
6
555
AA
2AA
55
555
60
PL
68
PL
48
PL
RD(0)
PPMLB Status (
5
)
6
555
AA
2AA
55
555
60
PL
RD(0)
SPMLB Program (
5
,
6
)
6
555
AA
2AA
55
555
60
SL
68
SL
48
SL
RD(0)
SPMLB Status (
5
)
6
555
AA
2AA
55
555
60
SL
RD(0)
DYB = Dynamic Protection Bit
OW = Address (A5–A0) is (011X10).
PPB = Persistent Protection Bit
PWA = Password Address. A0 selects between the low and high 32-bit portions
of the 64-bit Password
PWD = Password Data. Must be written over two cycles.
PL = Password Protection Mode Lock Address (A5–A0) is (001X10)
RD(0) = Read Data DQ0 protection indicator bit. If protected, DQ0= 1, if
unprotected, DQ0 = 0.
RD(1) = Read Data DQ1 protection indicator bit. If protected, DQ1 = 1, if
unprotected, DQ1 = 0.
SA = Sector Address. The set of addresses that comprise a sector. The system
may write any address within a sector to identify that sector for a command.
SG = Sector Group Address
BA = Bank Address. The set of addresses that comprise a bank. The system
may write any address within a bank to identify that bank for a command.
SL = Persistent Protection Mode Lock Address (A5–A0) is (010X10)
WP = PPB Address (A5–A0) is (111010)
X = Don’t care
PPMLB = Password Protection Mode Locking Bit
SPMLB = Persistent Protection Mode Locking Bit
1. See
Table 8.1
for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells in table denote read cycles. All other cycles are write
operations.
4. During unlock cycles, (lower address bits are 555 or 2AAh as shown in table)
address bits higher than A11 (except where BA is required) and data bits
higher than DQ7 are don’t cares.
5. The reset command returns the device to reading the array.
6. The fourth cycle programs the addressed locking bit. The fifth and sixth
cycles are used to validate whether the bit has been fully programmed. If
DQ0 (in the sixth cycle) reads 0, the program command must be issued and
verified again.
7. Data is latched on the rising edge of WE#.
8. The entire four bus-cycle sequence must be entered for each portion of the
password.
9. The fourth cycle erases all PPBs. The fifth and sixth cycles are used to
validate whether the bits have been fully erased. If DQ0 (in the sixth cycle)
reads 1, the erase command must be issued and verified again.
10.Before issuing the erase command, all PPBs should be programmed in order
to prevent over-erasure of PPBs.
11.In the fourth cycle, 00h indicates PPB set; 01h indicates PPB not set.
12.The status of additional PPBs and DYBs may be read (following the fourth
cycle) without reissuing the entire command sequence.
相關PDF資料
PDF描述
S29CD016J1MQFM000 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MQFM002 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MQFM003 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MQFM033 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MQFM100 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
相關代理商/技術參數(shù)
參數(shù)描述
S29CD016J1MQFM000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MQFM002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MQFM003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MQFM033 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MQFM100 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*