參數(shù)資料
型號: S29CD016J1MQFI033
廠商: SPANSION LLC
元件分類: PROM
英文描述: 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
中文描述: 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
封裝: LEAD FREE, PLASTIC, MO-108CB-1, QFP-80
文件頁數(shù): 59/76頁
文件大?。?/td> 1245K
代理商: S29CD016J1MQFI033
September27,2006 S29CD-J_CL-J_00_B1
S29CD-J & S29CL-J Flash Family
57
D a t a
S h e e t
( P r e l i m i n a r y )
18.5
Write Protect (WP#)
Figure 18.7
WP# Timing
18.6
Erase/Program Operations
Notes
1. Not 100% tested.
2. See
Section 20.1, Command Definitions on page 69
for more information.
3. Program Erase Parameters are the same, regardless of Synchronous or Asynchronous mode.
Program/Erase Command
WP#
Data
Valid WP#
t
BUSY
t
DS
t
DH
WE#
RY/BY#
t
WPWS
t
WPRH
t
WP
Table 18.5
Erase/Program Operations
Parameter
Description
All Speed
Options
Unit
JEDEC
Std.
t
AVAV
t
AVWL
t
WLAX
t
DVWH
t
WHDX
t
WC
t
AS
t
AH
t
DS
t
DH
Write Cycle Time
(Note 1)
Min
60
ns
Address Setup Time
Min
0
ns
Address Hold Time
Min
25
ns
Data Setup to WE# Rising Edge
Min
18
ns
Data Hold from WE# Rising Edge
Min
2
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
(Note 1)
Min
0
ns
t
ELWL
t
WHEH
t
WLWH
t
WHWL
t
WHWH1
t
WHWH2
t
CS
t
CH
t
WP
t
WPH
t
WHWH1
t
WHWH2
t
VCS
t
RB
t
BUSY
t
WPWS
t
WPRH
CE# Setup Time
Min
0
ns
CE# Hold Time
Min
0
ns
WE# Width
Min
25
ns
Write Pulse Width High
Min
30
ns
Programming Operation
(Note 2)
, Double-Word
Typ
9
μs
Sector Erase Operation
(Note 2)
Typ
0.5
sec.
V
CC
Setup Time
(Note 1)
Recovery Time from RY/BY#
(Note 1)
Min
50
μs
Min
0
ns
RY/BY# Delay After WE# Rising Edge
(Note 1)
Max
90
ns
WP# Setup to WE# Rising Edge with Command
(Note 1)
Min
20
ns
WP# Hold after RY/BY# Rising Edge
(Note 1)
Max
2
ns
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