參數(shù)資料
型號： S29CD016J1MFFM003
廠商： Spansion Inc.
英文描述： 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
中文描述： 32/16兆位的CMOS 2.6伏或3.3伏，只有同時讀/寫，雙啟動，突發(fā)模式閃存記憶體與VersatileI /輸出
文件頁數(shù)： 29/76頁
文件大?。?/td> 1245K
代理商： S29CD016J1MFFM003
September27,2006 S29CD-J_CL-J_00_B1
S29CD-J & S29CL-J Flash Family
27
D a t a
S h e e t
( P r e l i m i n a r y )
margin.
Section 20.1,
Command Definitions
on page 69
shows the address and data requirements for the
program command sequence.
Note the following:
When the Embedded Program algorithm is complete, the device returns to the read mode and address are
no longer latched. An address change is required to begin reading valid array data.
The system can determine the status of the program operation by using DQ7, DQ6 or RY/BY#. Refer to
Section 8.8,
Write Operation Status
on page 31
for information on these status bits.
A “0” cannot be programmed back to a “1.” Attempting to do so may halt the operation and set DQ5 to 1, or
cause the Data# Polling algorithm to indicate the operation was successful. . A succeeding read shows that
the data is still “0.” Only erase operations can convert a “0” to a “1.”
Any commands written to the device during the Embedded Program Algorithm are ignored except the
Program Suspend command.
A hardware reset immediately terminates the program operation; the program command sequence should
be re-initiated once the device has returned to the read mode, to ensure data integrity.
Figure 8.5
Program Operation
Note
See
Table 19.1
and
Table 20.2
for program command sequence.
8.7.2
Sector Erase
The sector erase function erases one or more sectors in the memory array. (See
Table 20.1, Memory Array
Command Definitions (x32 Mode), on page 69
and
Figure 8.6,
Erase Operation,
on page 29
.) The device
does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically
programs and verifies the entire memory for an all-zero data pattern prior to electrical erase. After a
S
TART
Write Progr
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Comm
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S
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ence
D
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t
a
Poll
from
S
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s
tem
Verify D
a
t
a
No
Ye
s
L
as
t Addre
ss
No
Ye
s
Progr
a
mming
Completed
Increment Addre
ss
Em
b
edded
Progr
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相關PDF資料
PDF描述
S29CD016J1MFFM033 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
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相關代理商/技術參數(shù)
參數(shù)描述
S29CD016J1MFFM033 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MFFM100 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MFFM102 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MFFM103 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MFFM133 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
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