參數(shù)資料
型號(hào)： S29CD016J1MFFM000
廠商： Spansion Inc.
英文描述： 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
中文描述： 32/16兆位的CMOS 2.6伏或3.3伏，只有同時(shí)讀/寫，雙啟動(dòng)，突發(fā)模式閃存記憶體與VersatileI /輸出
文件頁(yè)數(shù)： 47/76頁(yè)
文件大?。?/td> 1245K
代理商： S29CD016J1MFFM000
September27,2006 S29CD-J_CL-J_00_B1
S29CD-J & S29CL-J Flash Family
45
D a t a
S h e e t
( P r e l i m i n a r y )
Silicon sector if the overlayed sector was undergoing programming or erasure. The host system
must ensure that the device resume any suspended program or erase operation after exiting the
Secured Silicon sector.
10.1
Secured Silicon Sector Protection Bit
The Secured Silicon Sector can be shipped unprotected, allowing customers to utilize that sector in any
manner they choose.
Please note the following:
The Secured Silicon Sector can be read any number of times, but can be programmed and locked only
once. The Secured Silicon Sector Protection Bit must be used with caution as once locked, there is no
procedure available for unlocking the Secured Silicon Sector area and none of the bits in the Secured
Silicon Sector memory space can be modified in any way.
Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon
Sector Region command sequence to return the device to the memory array.
10.2
Secured Silicon Sector Entry and Exit Commands
The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon
Sector command sequence. The device continues to access the Secured Silicon Sector region until the
system issues the four-cycle Exit Secured Silicon Sector command sequence. See the
Table 20.1, Memory
Array Command Definitions (x32 Mode), on page 69
and
Table 20.2, Sector Protection Command Definitions
(x32 Mode), on page 70
for address and data requirements for both command sequences.
The Secured Silicon Sector Entry Command allows the following commands to be executed
Read Secured Silicon areas
Program Secured Silicon Sector (only once)
After the system has written the Enter Secured Silicon Sector command sequence, it can read the Secured
Silicon Sector by using the addresses listed in
Table 10.1,
Secured Silicon Sector Addresses
on page 44
.
This mode of operation continues until the system issues the Exit Secured Silicon Sector command
sequence, or until power is removed from the device.
11. Electronic Marking
Electronic marking has been programmed into the device, prior to shipment from Spansion, to ensure
traceability of individual products. The electronic marking is stored and locked within a one-time
programmable region. Detailed information on Electronic Marking will be provided in a datasheet supplement.
12. Power Conservation Modes
12.1
Standby Mode
When the system is not reading or writing to the device, it can place the device in standby mode. In this mode,
current consumption is greatly reduced, and outputs are placed in a high impedance state, independent of
OE# input. The device enters CMOS standby mode when the CE# and RESET# inputs are both held at V
CC
± 0.2 V. The device requires standard access time (t
CE
) for read access before it is ready to read data. If the
device is deselected during erasure or programming, the device draws active current until the operation is
completed.
I
CC5
in
Section 15.1,
DC Characteristic, CMOS Compatible
on page 48
represents the standby current
specification.
相關(guān)PDF資料
PDF描述
S29CD016J1MFFM002 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MFFM003 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MFFM033 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MFFM100 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29CD016J1MFFM002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MFFM003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MFFM033 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MFFM100 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MFFM102 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
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