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參數(shù)資料
| 型號： | S29CD016J1MFFI033 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| 中文描述： | 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80 |
| 文件頁數(shù)： | 34/76頁 |
| 文件大?。?/td> | 1245K |
| 代理商： | S29CD016J1MFFI033 |
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32
S29CD-J & S29CL-J Flash Family
S29CD-J_CL-J_00_B1 September27,2006
D a t a
S h e e t
( P r e l i m i n a r y )
operation and DQ7 has valid data, the data outputs on DQ6-DQ0 may be still invalid. Valid data on DQ7-D00
appears on successive read cycles.
See the following for more information:
Table 8.9,
Write Operation Status
on page 36
shows the outputs for
Data# Polling on DQ7.
Figure 8.7,
Data# Polling Algorithm,
on page 32
shows the Data# Polling timing
diagram.
Figure 8.7
Data# Polling Algorithm
Notes
1. VA = Valid address for programming. During a sector erase operation, a valid address is an address within any sector selected for
erasure. During chip erase, a valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 =
1
because DQ7 may change simultaneously with DQ5
8.8.2
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend mode.
Toggle Bit I may be read at any address in the same bank, and is valid after the rising edge of the final WE#
pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-
out.
DQ7 = D
a
t
a
Ye
s
No
No
DQ5 = 1
No
Ye
s
Ye
s
FAIL
PA
SS
Re
a
d DQ7–DQ0
Addr = VA
Re
a
d DQ7–DQ0
Addr = VA
DQ7 = D
a
t
a
S
TART
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| S29CD016J1MFFI100 | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J1MFFI102 | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J1MFFI103 | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J1MFFI133 | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J1MFFM000 | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29CD016J1MFFI100 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J1MFFI102 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J1MFFI103 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J1MFFI133 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J1MFFM000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
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