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參數(shù)資料
| 型號： | S29CD016G0JQAA000 |
| 廠商： | Spansion Inc. |
| 英文描述： | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| 中文描述： | 32兆位（1米× 32位），16兆位（512k × 32的位），2.5伏，只有突發(fā)模式，雙啟動，同步讀/寫閃存與VersatileI內(nèi)存/輸出 |
| 文件頁數(shù)： | 40/87頁 |
| 文件大?。?/td> | 792K |
| 代理商： | S29CD016G0JQAA000 |
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38
S29CD-G Flash Family
S29CD-G_00_B0 November 14, 2005
P r e l i m i n a r y
system must provide the proper signals to the control pins to prevent unintentional writes when
V
CC
is greater than V
LKO
.
W rite Pulse
Glitch
Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#, or WE# do not initiate a write cycle.
Logical I nhibit
Write cycles are inhibited by holding any one of OE# = V
IL
, CE# = V
IH
, or WE# = V
IH
. To initiate
a write cycle, CE# and WE# must be a logical zero (V
IL
) while OE# is a logical one (V
IH
).
Pow er-Up W rite I nhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power-up, the device does not accept commands on
the rising edge of WE#. The internal state machine is automatically reset to reading array data
on power-up.
V
CC
and V
I O
Pow er-up And Pow er-dow n Sequencing
The device imposes no restrictions on V
CC
and V
IO
power-up or power-down sequencing. Assert-
ing RESET# to V
IL
is required during the entire V
CC
and V
IO
power sequence until the respective
supplies reach the operating voltages. Once, V
CC
and V
IO
attain the operating voltages, de-asser-
tion of RESET# to V
IH
is permitted.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29CD016G0JQAA002 | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JQAA010 | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JQAM000 | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JQAM002 | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JQAM010 | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29CD016G0JQAA002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JQAA010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JQAA012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JQAA100 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JQAA102 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
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