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參數(shù)資料
| 型號： | S29C51004T90T |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
| 中文描述： | 4兆位（524288 × 8位）5伏的CMOS閃存 |
| 文件頁數(shù)： | 7/16頁 |
| 文件大?。?/td> | 3205K |
| 代理商： | S29C51004T90T |
7
S29C51004T/S29C51004B
V1.0 May 2002
Waveforms of CE Controlled-Program Cycle
Waveforms of Erase Cycle
(1)
NOTES:
1.
2.
3.
PA: The address of the memory location to be programmed.
PD: The data at the byte address to be programmed.
SA: The sector address for Sector Erase.
t
WC
t
AS
t
WHWH1
t
WPH
t
OES
t
RC
t
AH
t
DS
t
DH
t
WP
t
DF
t
OH
t
OE
D
OUT
I/O7
PD
(2)
A0H
51004-11
ADDRESS
5555H
PA
PA
(1)
WE
OE
CE
I/O
t
WC
t
AS
t
WPH
t
WHWH2
3
ADDRESS
CE
OE
WE
I/O
5555H
5555H
5555H
2AAAH
2AAAH
SA
(5555H for Chip Erase)
AAH
55H
80H
AAH
55H
30H
(10H for
Chip Erase)
51004-12
t
AH
t
WP
t
DS
t
DH
t
CS
SyncMOS Technologies Inc.
S
29C51004T/
S
29C51004B
4 MEGABIT (524,288 x 8
BIT)
5 VOLT CMOS FLASH MEMORY
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29C51004T | 4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
| S29C51004T12J | 4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
| S29C51004T12P | 4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
| S29C51004T12T | 4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
| S29C51004B90J | 4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
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