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參數(shù)資料
| 型號： | S29C51004T90P |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
| 中文描述： | 4兆位（524288 × 8位）5伏的CMOS閃存 |
| 文件頁數(shù)： | 5/16頁 |
| 文件大小： | 3205K |
| 代理商： | S29C51004T90P |
5
S29C51004T/S29C51004B
V1.0 May 2002
AC Electrical Characteristics
Read Cycle
Program (Erase/Program) Cycle
Parameter
Name
Parameter
-70
-90
-12
Unit
Min.
Max.
Min.
Max.
Min.
Max.
t
RC
Read Cycle Time
70
—
90
—
120
—
ns
t
AA
Address Access Time
—
70
—
90
—
120
ns
t
ACS
Chip Enable Access Time
—
70
—
90
—
120
ns
t
OE
Output Enable Access Time
—
35
—
45
—
60
ns
t
CLZ
CE Low to Output Active
0
—
0
—
0
—
ns
t
OLZ
OE Low to Output Active
0
—
0
—
0
—
ns
t
DF
OE or CE High to Output in High Z
0
30
0
40
0
50
ns
t
OH
Output Hold from Address Change
0
—
0
—
0
—
ns
Parameter
Name
Parameter
-70
-90
-12
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
t
WC
Write Cycle Time
70
—
—
90
—
—
120
—
—
ns
t
AS
Address Setup Time
0
—
—
0
—
—
0
—
—
ns
t
AH
Address Hold Time
45
—
—
45
—
—
50
—
—
ns
t
CS
CE Setup Time
0
—
—
0
—
—
0
—
—
ns
t
CH
CE Hold Time
0
—
—
0
—
—
0
—
—
ns
t
OES
OE Setup Time
0
—
—
0
—
—
0
—
—
ns
t
OEH
OE High Hold Time
0
—
—
0
—
—
0
—
—
ns
t
WP
WE Pulse Width
35
—
—
45
—
—
50
—
—
ns
t
WPH
WE Pulse Width High
20
—
—
30
—
—
35
—
—
ns
t
DS
Data Setup Time
30
—
—
30
—
—
30
—
—
ns
t
DH
Data Hold Time
0
—
—
0
—
—
0
—
—
ns
t
WHWH1
Programming Cycle
—
—
3
5
—
—
3
5
—
—
3
5
μ
s
t
WHWH2
Sector Erase Cycle
—
—
10
—
—
10
—
—
10
ms
t
WHWH3
Chip Erase Cycle
—
—
3.0
—
—
3.0
—
—
3.0
sec
SyncMOS Technologies Inc.
S
29C51004T/
S
29C51004B
4 MEGABIT (524,288 x 8
BIT)
5 VOLT CMOS FLASH MEMORY
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| S29C51004T90T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
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