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參數(shù)資料
| 型號(hào)： | S29C51001 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
| 中文描述： | 1兆位（131072 × 8位）5伏的CMOS閃存 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 7725K |
| 代理商： | S29C51001 |
1
S
29C51001T/
S
29C51001B
V1.0
February
2003
Features
I
I
I
I
I
I
128Kx8-bit Organization
Address Access Time:
70
,
9
0,
12
0 ns
Single 5V
±
10% Power Supply
Sector Erase Mode Operation
8KB Boot Block (lockable)
512 bytes per Sector, 256 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Program Cycle Time: 20
Minimum 10,000 Erase-Program Cycles
Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100
Hardware Data Protection
Low V
CC
Program Inhibit Below 3.2V
Self-timed program/erase operations with end-
of-cycle detection
– DATA Polling
– Toggle Bit
CMOS and TTL Interface
Available in two versions
–
S
29C51001T (Top Boot Block)
–
S
29C51001B (Bottom Boot Block)
Packages:
– 32-pin Plastic DIP
– 32-pin TSOP-I
– 32-pin PLCC
μ
s (Max)
I
I
μ
A (Max)
I
I
I
I
I
I
Description
The
S
29C51001T/
S
29C51001B is a high speed
131,072 x 8 bit CMOS flash memory. Programming
or erasing the device is done with a single 5 Volt
power supply. The device has separate chip enable
CE, program enable WE, and output enable OE
controls to eliminate bus contention.
The
S
29C51001T/
S
29C51001B offers a combi-
nation of features: Boot Block with Sector Erase
Mode. The end of program/erase cycle is detected
by DATA Polling of I/O
7
or by the Toggle Bit I/O
The
S
29C51001T/
S
29C51001B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. The device also
supports full chip erase.
Boot block architecture enables the device to
boot from a protected sector loaded either at the
top (
S
29C51001T) or the bottom (
S
29C51001B)
sector. All inputs and outputs are CMOS and TTL
compatible.
The
S
29C51001T/
S
29C51001B is ideal for
applications that require updatable code and data
storage.
6
.
SyncMOS Technologies Inc.
S
29C5100
1
T/
S
29C5100
1
B
1
MEGABIT (
131,072
x 8
BIT)
5 VOLT CMOS FLASH MEMORY
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29C51004T90J | 4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
| S29C51004B | 4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
| S29C51004B12J | 4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
| S29C51004B12P | 4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
| S29C51004B12T | 4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29C51001B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
| S29C51001T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
| S29C51004B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
| S29C51004B12J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
| S29C51004B12P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY |
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