參數(shù)資料
型號(hào): S29AL016M10FFI010
廠商: SPANSION LLC
元件分類(lèi): PROM
英文描述: 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY
中文描述: 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝: 13 X 11 MM, LEAD FREE, FBGA-64
文件頁(yè)數(shù): 42/62頁(yè)
文件大?。?/td> 1850K
代理商: S29AL016M10FFI010
October 11, 2006 S29AL016M_00_A7
S29AL016M
45
Data
Sheet
AC Characteristics
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
3. If a program suspend command is issued within tPOLL, the device requires tPOLL before reading status data, once
programming has resumed (that is, the program resume command has been written). If the suspend command was issued
after tPOLL, status data is available immediately after programming has resumed. See Figure 15.
Parameter
Speed Options
JEDEC
Std
Description
90
100
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tDVWH
tDS
Data Setup Time
Min
35
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
Programming Operation (Note 2)
Typ
18
s
tWHWH2
Sector Erase Operation (Note 2)
Typ
1
sec
tVCS
VCC Setup Time (Note 1)
Min
50
s
tRB
Recovery Time from RY/BY#
Min
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Max
90
100
ns
tPOLL
Program Valid Before Status Polling (Note 3)
Max
4
s
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