參數(shù)資料
型號(hào)： S29AL016D90BFN013
廠(chǎng)商： SPANSION LLC
元件分類(lèi)： PROM
英文描述： 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
封裝： 8.15 X 6.15 MM, LEAD FREE, FBGA-48
文件頁(yè)數(shù)： 20/55頁(yè)
文件大小： 1809K
代理商： S29AL016D90BFN013
November 27, 2007 S29AL016D_00_A7
S29AL016D
27
Data
She e t
Figure 9.1 Program Operation
Note
See Table 10.1 on page 30 for program command sequence.
9.6
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical erase. The system is not required to provide any
controls or timings during these operations. Table 10.1 on page 30 shows the address and data requirements
for the chip erase command sequence.
Any commands written to the chip during the Embedded Erase algorithm are ignored. Note that a hardware
reset during the chip erase operation immediately terminates the operation. The Chip Erase command
sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity.
The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. See Write
Operation Status on page 31 for information on these status bits. When the Embedded Erase algorithm is
complete, the device returns to reading array data and addresses are no longer latched.
Figure 9.2 on page 29 illustrates the algorithm for the erase operation. See Erase/Program Operations
on page 43 for parameters, and Figure 17.6 on page 44 for timing diagrams.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data?
No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
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