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參數(shù)資料
| 型號： | S29AL008D90TAI013 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | MO-142BDD, TSOP-48 |
| 文件頁數(shù)： | 46/52頁 |
| 文件大?。?/td> | 2004K |
| 代理商： | S29AL008D90TAI013 |
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S29AL008D
S29AL008D_00_A11 February 27, 2009
Da ta
Sh e e t
17.4
Revision A3 (June 16, 2005)
Changed from Preliminary to full Data Sheet. Updated Valid Combinations table.
17.5
Revision A4 (February 16, 2006)
Corrected minor typo on page 1. Added cover page.
17.6
Revision A5 (May 22, 2006)
AC Characteristics
Added tSR/W parameter to read and erase/program operations tables. Added back-to-back read/write cycle
timing diagram. Changed maximum value for tDF and tFLQZ.
17.7
Revision A6 (September 6, 2006)
Global
Added 60 ns speed option.
17.8
Revision A7 (October 31, 2006)
Automatic Sleep Mode
Changed ICC4 to ICC5 in description.
AC Characteristics, Erase / Program Operations
Changed tBUSY to a maximum value.
17.9
Revision A8 (August 29, 2007)
TS048 Physical dimensions
Changed Revision from AA to E: changed degrees (max) from 5 to 8
17.10 Revision A9 (September 19, 2007)
Product Selector Guide
Changed TOE for 55ns access speed
Autoselect Codes Table
Changed part references to AL008D
Added A3 to A2 column
Command Definitions Table
Added F0 as an alternative 2nd cycle command for Unlock Bypass Reset
Test Specifications Table
Added CL = 30 pF under 60 ns access speed
Changed Input Pulse Levels, Input and Output timing measurement reference levels
Erase/Program Operations Table
Changed value of Programming Operation for Byte mode
Alternate CE# Controlled Erase/Program Operations Table
Changed values of Program Operation for both Byte & Word modes
Changed value of Sector Erase Operation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29AL008D90TAI020 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAI023 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAN010 | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 22pF; Working Voltage (Vdc)[max]: 1000V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
| S29AL008D70MFN010 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90MFN010 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29AL008D90TAI020 | 制造商:Spansion 功能描述:SPZS29AL008D90TAI020 8M FLASH EOL100409 |
| S29AL008D90TAI021 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAI022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAIR10 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 90NS 48TSOP - Trays |
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