參數(shù)資料
型號: S29AL008D70MFN010
廠商: SPANSION LLC
元件分類: PROM
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 512K X 16 FLASH 3V PROM, 70 ns, PDSO44
封裝: LEAD FREE, MO-180AAA, SOP-44
文件頁數(shù): 33/52頁
文件大?。?/td> 2004K
代理商: S29AL008D70MFN010
February 27, 2009 S29AL008D_00_A11
S29AL008D
39
Data
She e t
15.1
Erase/Program Operations
Notes
1. Not 100% tested.
Figure 15.5 Program Operation Timings
Notes
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode
Parameter
Description
Speed Options
JEDEC
Std
55
60
70
90
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
55
60
70
90
ns
tAVWL
tAS
Address Setup Time
0
tWLAX
tAH
Address Hold Time
45
tDVWH
tDS
Data Setup Time
35
45
tWHDX
tDH
Data Hold Time
0
tOES
Output Enable Setup Time
0
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
0
tELWL
tCS
CE# Setup Time
0
tWHEH
tCH
CE# Hold Time
0
tWLWH
tWP
Write Pulse Width
35
tWHWL
tWPH
Write Pulse Width High
30
tSR/W
Latency Between Read and Write Operations
20
ns
tWHWH1
tWHWH1 Programming Operation (Note 2)
Byte
Typ
7
s
Word
7
tWHWH2
tWHWH2 Sector Erase Operation (Note 2)
0.7
sec
tVCS
VCC Setup Time (Note 1)
Min
50
s
tRB
Recovery Time from RY/BY#
Min
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Max
90
OE#
WE#
CE#
VCC
Data
Addresses
tDS
tAH
tD
tWP
PD
tWHWH1
tWC
tAS
tWPH
tVCS
555h
PA
Read Status Data (last two cycles)
A0h
tCS
Status
DOUT
Program Command Sequence (last two cycles)
RY/BY#
tRB
tBUSY
tCH
PA
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