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參數(shù)資料
| 型號： | S29AL004D |
| 廠商： | Spansion Inc. |
| 英文描述： | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4兆位（512 kX的8-Bit/256畝x 16位），3.0伏的CMOS只引導扇區(qū)閃存 |
| 文件頁數(shù)： | 23/55頁 |
| 文件大小： | 1481K |
| 代理商： | S29AL004D |
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February 18, 2005 S29AL004D_00_A1
S29AL004D
21
A d v a n c e I n f o r m a t i o n
Note:
See
Table 5 on page 24
for program command sequence.
Figure 3. Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is ini-
tiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the chip erase command,
which in turn invokes the Embedded Erase algorithm. The device does
not
require
the system to preprogram prior to erase. The Embedded Erase algorithm auto-
matically preprograms and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide any controls or tim-
ings during these operations.
Table on page 24
shows the address and data
requirements for the chip erase command sequence.
Any commands written to the chip during the Embedded Erase algorithm are ig-
nored. Note that a
hardware reset
during the chip erase operation immediately
terminates the operation. The Chip Erase command sequence should be reiniti-
ated once the device has returned to reading array data, to ensure data integrity.
The system can determine the status of the erase operation by using DQ7, DQ6,
DQ2, or RY/BY#. See
Write Operation Status on page 26
for information on
these status bits. When the Embedded Erase algorithm is complete, the device
returns to reading array data and addresses are no longer latched.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data
No
Yes
Last Address
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29AL004D90BAI012 | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BAI013 | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BAI020 | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BAI022 | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BAI023 | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29AL004D55MAIR10 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8/256KX16 55NS 44SOP - Rail/Tube |
| S29AL004D55MAIR20 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8/256KX16 55NS 44SOP - Rail/Tube |
| S29AL004D55TAI010 | 制造商:Spansion 功能描述: |
| S29AL004D55TAI020 | 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,256KX16/512KX8,CMOS,TSSOP,48PIN,PLASTIC |
| S29AL004D55TAIR10 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8/256KX16 55NS 48TSOP - Trays |
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