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參數(shù)資料
| 型號(hào)： | S29AL004D90BAI020 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 256K X 16 FLASH 3V PROM, 90 ns, PBGA48 |
| 封裝： | 8.15 X 6.15 MM, FBGA-48 |
| 文件頁數(shù)： | 14/55頁 |
| 文件大?。?/td> | 1481K |
| 代理商： | S29AL004D90BAI020 |
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12
S29AL004D
S29AL004D_00_A1 February 18, 2005
A d v a n c e I n f o r m a t i o n
content occurs during the power transition. No command is necessary in this
mode to obtain array data. Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid data on the device data
outputs. The device remains enabled for read access until the command register
contents are altered.
See
Reading Array Data on page 18
for more information. Refer to the AC table
for timing specifications and to
Figure 13, on page 37
for the timing diagram. I
CC1
in the DC Characteristics table represents the active current specification for
reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data
to the device and erasing sectors of memory), the system must drive WE# and
CE# to V
IL
, and OE# to V
IH
.
For program operations, the BYTE# pin determines whether the device accepts
program data in bytes or words. Refer to
Word/Byte Configuration on page 11
for more information.
The device features an
Unlock Bypass
mode to facilitate faster programming.
Once the device enters the Unlock Bypass mode, only two write cycles are re-
quired to program a word or byte, instead of four. The
Word/Byte Program
Command Sequence on page 19
has details on programming data to the device
using both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device.
Table 2 on page 13
and
Table on page 14
indicate the address space that each
sector occupies. A
sector address
consists of the address bits required to uniquely
select a sector. The
Command Definitions on page 18
has details on erasing a
sector or the entire chip, or suspending/resuming the erase operation.
After the system writes the autoselect command sequence, the device enters the
autoselect mode. The system can then read autoselect codes from the internal
register (which is separate from the memory array) on DQ7–DQ0. Standard read
cycle timings apply in this mode. Refer to the
Autoselect Mode on page 14
and
Autoselect Command Sequence on page 19
for more information.
I
CC2
in the DC Characteristics table represents the active current specification for
the write mode. The
AC Characteristics on page 37
contains timing specification
tables and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may check the status of the
operation by reading the status bits on DQ7–DQ0. Standard read cycle timings
and I
CC
read specifications apply. Refer to
Write Operation Status on page 26
for
more information, and to
AC Characteristics on page 37
for timing diagrams.
Standby Mode
When the system is not reading or writing to the device, it can place the device
in the standby mode. In this mode, current consumption is greatly reduced, and
the outputs are placed in the high impedance state, independent of the OE#
input.
The device enters the CMOS standby mode when the CE# and RESET# pins are
both held at V
CC
±
0.3 V. (Note that this is a more restricted voltage range than
V
IH
.) If CE# and RESET# are held at V
IH
, but not within V
CC
±
0.3 V, the device
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29AL004D90BAI022 | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BAI023 | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BFI010 | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BFI012 | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BFI013 | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29AL004D90BAI022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BAI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BFI010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BFI010(E) | 制造商:Spansion 功能描述:Cut Tape |
| S29AL004D90BFI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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