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參數(shù)資料
| 型號(hào)： | S268P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon PIN Photodiode Array |
| 中文描述： | 硅PIN光電二極管陣列 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 80K |
| 代理商： | S268P |
S268P
Vishay Telefunken
3 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81538
0.01
0.1
1
0.1
1
10
100
1000
I
r
E
e
– Irradiance ( mW/cm
2
)
10
94 8417
V
R
=5V
=950nm
Figure 3. Reverse Light Current vs. Irradiance
0.1
1
10
100
1000
E
A
– Illuminance ( lx )
94 8418
I
r
10
1
10
2
10
3
10
4
V
R
=5V
Figure 4. Reverse Light Current vs. Illuminance
0.1
1
10
1
10
100
V
R
– Reverse Voltage ( V )
100
94 8419
I
r
1mW/cm
2
0.5mW/cm
2
0.2mW/cm
2
0.1mW/cm
2
0.05mW/cm
2
=950nm
Figure 5. Reverse Light Current vs. Reverse Voltage
0.1
1
10
0
20
40
60
80
C
D
V
R
– Reverse Voltage ( V )
100
94 8407
E=0
f=1MHz
Figure 6. Diode Capacitance vs. Reverse Voltage
350
550
750
950
0
0.2
0.4
0.6
0.8
1.0
1150
94 8420
S
r
– Wavelength ( nm )
Figure 7. Relative Spectral Sensitivity vs. Wavelength
0.4
0.2
0
0.2
0.4
S
r
0.6
94 8406
0.6
0.9
0.8
0
°
30
°
10
°
20
°
40
°
50
°
60
°
70
°
80
°
0.7
1.0
Figure 8. Relative Radiant Sensitivity vs.
Angular Displacement
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