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參數(shù)資料
| 型號： | S268P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon PIN Photodiode Array(反向電壓60V的PIN光二極管陣列) |
| 中文描述： | 硅PIN光電二極管陣列（反向電壓60V的密碼光二極管陣列的） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 80K |
| 代理商： | S268P |
S268P
Vishay Telefunken
2 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81538
Basic Characteristics
T
amb
= 25 C
Parameter
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Test Conditions
I
R
= 100 A, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 3 V, f = 1 MHz, E = 0
E
e
= 1 mW/cm
2
E
e
= 1 mW/cm
2
E
A
= 1 klx
E
e
= 1 mW/cm
2
, = 950 nm
E
A
= 1 mW/cm
2
,
= 950 nm
E
A
= 1 klx, V
R
= 5 V
E
e
= 1 mW/cm
2
,
= 950 nm, V
R
= 5 V
Symbol
V
(BR)
I
ro
C
D
C
D
V
o
TK
Vo
I
k
I
k
TK
Ik
Min
60
Typ
Max
Unit
V
nA
pF
pF
mV
mV/K
A
A
%/K
2
70
25
350
–2.6
70
47
0.1
30
40
Open Circuit Voltage
Temp. Coefficient of V
o
Short Circuit Current
Temp. Coefficient of I
k
Reverse Light Current
I
ra
I
ra
75
50
A
A
40
Reverse Light Current Ratio of
Two Diodes
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
1:1.2
±
65
900
deg
nm
nm
W/
√
Hz
ns
p
0.5
600...1050
4x10
–14
100
V
R
= 10 V, = 950 nm
V
R
= 10 V, R
L
= 1 k ,
= 820 nm
V
R
= 10 V, R
L
= 1 k ,
= 820 nm
NEP
t
r
Fall Time
t
f
100
ns
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
20
40
60
80
1
10
100
1000
I
r
T
amb
– Ambient Temperature (
°
C )
100
94 8403
V
R
=10V
Figure 1. Reverse Dark Current vs. Ambient Temperature
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0.6
0.8
1.0
1.2
1.4
I
r
100
94 8416
V
R
=5V
=950nm
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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