參數(shù)資料
型號(hào)： S25FL002D0FMFI013
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
中文描述： 2M X 1 SPI BUS SERIAL EEPROM, PDSO8
封裝： 0.208 INCH, LEAD FREE, PLASTIC, SO-8
文件頁數(shù)： 20/38頁
文件大小： 892K
代理商： S25FL002D0FMFI013
20
S25FL Family (Serial Peripheral Interface)
30167A+1 June 9, 2004
P r e l i m i n a r y I n f o r m a t i o n
Figure 11. Page Program (PP) Instruction Sequence
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector.
Before it can be accepted, a Write Enable (WREN) instruction must previously
have been executed. After the Write Enable (WREN) instruction has been de-
coded, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip Select (CS#) Low,
followed by the instruction code, and three address bytes on Serial Data Input
(SI). Any address inside the Sector (see Table
1
and Table
2
) is a valid address
for the Sector Erase (SE) instruction. Chip Select (CS#) must be driven Low for
the entire duration of the sequence.
The instruction sequence is shown in
Figure 12
.
Chip Select (CS#) must be driven High after the eighth bit of the last address byte
has been latched in, otherwise the Sector Erase (SE) instruction is not executed.
As soon as Chip Select (CS#) is driven High, the self-timed Sector Erase cycle
(whose duration is tSE) is initiated. While the Sector Erase cycle is in progress,
the Status Register may be read to check the value of the Write In Progress (WIP)
bit. The Write In Progress (WIP) bit is 1 during the self-timed Sector Erase cycle,
and is 0 when it is completed. At some unspecified time before the cycle is com-
pleted, the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to any memory area that is protected by
the Block Protect (BP1, BP0) bits (see Table
1
and Table
2
) is not executed.
0
34
33
32
31
30
29
28
10
9
8
7
6
5
4
3
2
1
3536 3738 39
46
45
44
43
42
41
40
4748 4950 51 52 5354 55
2
2
2
2
2
2
2
2
23 22 21
3
2
1
0
7
6
5
4
3
2
1
0
Data Byte 1
24-Bit Address
Instruction
Data Byte 2
Data Byte 3
Data Byte 256
MSB
MSB
MSB
MSB
MSB
SCK
SI
SCK
SI
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
CS#
CS#
相關(guān)PDF資料
PDF描述
S25FL002D0FNAI001 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
S25FL002D0FNAI003 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
S25FL002D0FNAI011 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
S25FL002D0FNAI013 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
S25FL002D0FNFI001 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S25FL002D0FNAI001 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
S25FL002D0FNAI003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
S25FL002D0FNAI011 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
S25FL002D0FNAI013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
S25FL002D0FNFI001 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*