- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374648 > S25FL002D0FMFI003 (SPANSION LLC) 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface PDF資料下載
參數(shù)資料
| 型號： | S25FL002D0FMFI003 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface |
| 中文描述： | 2M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 0.150 INCH, LEAD FREE, PLASTIC, MS-012AA, SO-8 |
| 文件頁數(shù)： | 9/38頁 |
| 文件大?。?/td> | 892K |
| 代理商： | S25FL002D0FMFI003 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁當(dāng)前第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁
June 9, 2004 30167A+1
S25FL Family (Serial Peripheral Interface)
9
P r e l i m i n a r y I n f o r m a t i o n
Operating Features
All data into and out of the device is shifted in 8-bit chunks.
Page Programming
To program one data byte, two instructions are required: Write Enable (WREN),
which is one byte, and a Page Program (PP) sequence, which consists of four
bytes plus data. This is followed by the internal Program cycle. To spread this
overhead, the Page Program (PP) instruction allows up to 256 bytes to be pro-
grammed at a time (changing bits from 1 to 0), provided that they lie in
consecutive addresses on the same page of memory.
Sector Erase, or Bulk Erase
The Page Program (PP) instruction allows bits to be programmed from 1 to 0. Be-
fore this can be applied, the bytes of the memory need to be first erased to all
1’s (FFh) before any programming. This can be achieved in two ways: 1) a sector
at a time using the Sector Erase (SE) instruction, or 2) throughout the entire
memory, using the Bulk Erase (BE) instruction.
Polling During a Write, Program, or Erase Cycle
A further improvement in the time to Write Status Register (WRSR), Program (PP)
or Erase (SE or BE) can be achieved by not waiting for the worst-case delay. The
Write in Progress (WIP) bit is provided in the Status Register so that the applica-
tion program can monitor its value, polling it to establish when the previous Write
cycle, Program cycle, or Erase cycle is complete.
Active Power and Standby Power Modes
When Chip Select (CS#) is Low, the device is enabled, and in the Active Power
mode. When Chip Select (CS#) is High, the device is disabled, but could remain
in the Active Power mode until all internal cycles have completed (Program,
Erase, Write Status Register). The device then goes into the Standby Power
mode. The device consumption drops to I
SB
. This can be used as an extra soft-
ware protection mechanism, when the device is not in active use, to protect the
Status Register
The Status Register contains a number of status and control bits, as shown in
Fig-
ure 7
, that can be read or set (as appropriate) by specific instructions
WIP bit:
The Write In Progress (WIP) bit indicates whether the memory is
busy with a Write Status Register, Program or Erase cycle.
WEL bit:
The Write Enable Latch (WEL) bit indicates the status of the internal
Write Enable Latch.
BP1, BP0 bits:
The Block Protect (BP1, BP0) bits are non-volatile. They de-
fine the size of the area to be software protected against Program and Erase
instructions.
SRWD bit:
The Status Register Write Disable (SRWD) bit is operated in con-
junction with the Write Protect (W#) signal. The Status Register Write Disable
(SRWD) bit and Write Protect (W#) signal allow the device to be put in the
Hardware Protected mode. In this mode, the non-volatile bits of the Status
Register (SRWD, BP1, BP0) become read-only bits.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S25FL002D0FMFI011 | 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface |
| S25FL002D0FMFI013 | 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface |
| S25FL002D0FNAI001 | 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface |
| S25FL002D0FNAI003 | 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface |
| S25FL002D0FNAI011 | 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S25FL002D0FMFI011 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface |
| S25FL002D0FMFI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface |
| S25FL002D0FNAI001 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface |
| S25FL002D0FNAI003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface |
| S25FL002D0FNAI011 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。