
S2592/S3477 series
S2592/S3477 series sensors combine a UV to near infrared Si photodiode with a thermoelectric cooler. A thermistor is also included in the same
package to sense the Si photodiode chip temperature. This allows stable operation over long periods of time, making these sensors suitable for
low-light-level detection where a high S/N is required.
S2592 series is hermetically sealed in a TO-8 package, and S3477 series in a TO-66 package. A dedicated temperature controller (C1103-04)
and heatsink (A3179 series) are also available as options (sold separately).
Features
l High S/N
l High UV sensitivity
l Built-in thermistor allows stable operation
Applications
l Low-light-level detection
PHOTODIODE
Si photodiode
Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR
s General ratings
Parameter
S2592-03
S3477-03
S2592-04
S3477-04
Unit
Built-in photodiode
S1336 series
-
Window material
Sapphire glass
-
Active area
2.4 × 2.4
5.8 × 5.8
mm
Package
TO-8
TO-66
TO-8
TO-66
s Absolute maximum ratings
Parameter
Symbol
Value
Unit
Reverse voltage
VR
5V
Operating temperature
Topr
-40 to +70
°C
Storage temperature
Tstg
-55 to +85
°C
Allowable current for
thermoelectric cooler
Ite
1.5
A
T h er mist or po w er dissipation
Pth
0.2
mW
s Electrical and optical characteristics (Typ. Ta=25
°C)
Parameter
Symbol
Condition
S2592-03
S3477-03
S2592-04
S3477-04
Unit
Spectral response range
λ
190 to 1100
nm
Peak sensitivity wavelength
λp
960
nm
Photo sensitivity
S
λ=λp
0.5
A/W
Short circuit current
Isc
100 lx, 2856 K
5
28
A
Dark current
ID
VR=10 mV
10
25
pA
Temperature coefficient of
dark current
TCID
1.15
times/°C
Rise time
tr
VR=0 V, RL=1 k
0.2
1
s
Terminal capacitance
Ct
VR=0 V
65
380
pF
Shunt resistance
Rsh
VR=10 mV
1
0.4
G
Noise equivalent power
NEP
VR=0 V,
λ=λp
8.1 × 10
-15
1.3 × 10
-14
W/Hz
1/2
Cooling temperature
T
35
°C
1